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500 V Drain to Source Voltage, 50 W Power Dissipation, NChannel Silicon Power MOSFET

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High voltage

VGS is +/-35 V guarantee

Avalanche-proof

F-I Series = Low RDS(ON)

F-II Series = VGS ±30 V, Reduced Turn Off Time

FAP-II Series = High Avalanche Ruggedness

FAP-III = Logic Level, High Avalanche Ruggedness

FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V

FAP-IIA = Reduced Turn Off Time

FAP-IIIBH = High Speed Non Logic

FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V

FAP-G = Ultra Fast Switching

F-I Series = Low RDS(ON)

F-II Series = VGS ±30 V, Reduced Turn Off Time

FAP-II Series = High Avalanche Ruggedness

FAP-III = Logic Level, High Avalanche Ruggedness

FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V

FAP-IIA = Reduced Turn Off Time

FAP-IIIBH = High Speed Non Logic

FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V

FAP-G = Ultra Fast Switching

Application	For switching regulators, UPS, DC-DC converters and general purpose power amplifier
Capacitance, Input	1400 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	±15 A
Current, Drain, Pulse	±60
Dimensions	10 x 4.5 x 15 mm
Height	0.591" (15mm)
Length	0.393" (10mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	150 °C
Package Type	TO-220F15
Polarization	N-Channel
Power Dissipation	50 W
Resistance, Drain to Source On	0.55 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	90 ns
Time, Turn-On Delay	30 ns
Transconductance, Forward	9 sec
Voltage, Breakdown, Drain to Source	500 V
Voltage, Drain to Source	500 V
Voltage, Forward, Diode	1.1 V
Voltage, Gate to Source	±35 V
Width	0.177" (4.5mm)
关键词

Application For switching regulators, UPS, DC-DC converters and general purpose power amplifier  Fuji Semiconductor Application For switching regulators, UPS, DC-DC converters and general purpose power amplifier  MOSFET Transistors Application For switching regulators, UPS, DC-DC converters and general purpose power amplifier  Fuji Semiconductor MOSFET Transistors Application For switching regulators, UPS, DC-DC converters and general purpose power amplifier   Capacitance, Input 1400 pF @ 25 V  Fuji Semiconductor Capacitance, Input 1400 pF @ 25 V  MOSFET Transistors Capacitance, Input 1400 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 1400 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±15 A  Fuji Semiconductor Current, Drain ±15 A  MOSFET Transistors Current, Drain ±15 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±15 A   Current, Drain, Pulse ±60  Fuji Semiconductor Current, Drain, Pulse ±60  MOSFET Transistors Current, Drain, Pulse ±60  Fuji Semiconductor MOSFET Transistors Current, Drain, Pulse ±60   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Length 0.393" (10mm)  Fuji Semiconductor Length 0.393" (10mm)  MOSFET Transistors Length 0.393" (10mm)  Fuji Semiconductor MOSFET Transistors Length 0.393" (10mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature 150 °C  Fuji Semiconductor Operating and Storage Temperature 150 °C  MOSFET Transistors Operating and Storage Temperature 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature 150 °C   Package Type TO-220F15  Fuji Semiconductor Package Type TO-220F15  MOSFET Transistors Package Type TO-220F15  Fuji Semiconductor MOSFET Transistors Package Type TO-220F15   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 50 W  Fuji Semiconductor Power Dissipation 50 W  MOSFET Transistors Power Dissipation 50 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 50 W   Resistance, Drain to Source On 0.55 Ω  Fuji Semiconductor Resistance, Drain to Source On 0.55 Ω  MOSFET Transistors Resistance, Drain to Source On 0.55 Ω  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 0.55 Ω   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 90 ns  Fuji Semiconductor Time, Turn-Off Delay 90 ns  MOSFET Transistors Time, Turn-Off Delay 90 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 90 ns   Time, Turn-On Delay 30 ns  Fuji Semiconductor Time, Turn-On Delay 30 ns  MOSFET Transistors Time, Turn-On Delay 30 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 30 ns   Transconductance, Forward 9 sec  Fuji Semiconductor Transconductance, Forward 9 sec  MOSFET Transistors Transconductance, Forward 9 sec  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 9 sec   Voltage, Breakdown, Drain to Source 500 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 500 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V   Voltage, Drain to Source 500 V  Fuji Semiconductor Voltage, Drain to Source 500 V  MOSFET Transistors Voltage, Drain to Source 500 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 500 V   Voltage, Forward, Diode 1.1 V  Fuji Semiconductor Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.1 V   Voltage, Gate to Source ±35 V  Fuji Semiconductor Voltage, Gate to Source ±35 V  MOSFET Transistors Voltage, Gate to Source ±35 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±35 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)