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2SK3528-01R - 

MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.29Ohm; ID +/-21A; TO-3PF; PD 160W; VGS +/-30V

Fuji Semiconductor 2SK3528-01R
声明：图片仅供参考，请以实物为准！
制造商产品编号：
2SK3528-01R
仓库库存编号：
70212493
技术数据表：
View 2SK3528-01R Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

2SK3528-01R产品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`

    • 2SK3528-01R产品信息

      Capacitance, Input  2280 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±21 A  
      Dimensions  15.5 x 5.5 x 21.5 mm  
      Gate Charge, Total  54 nC  
      Height  0.846" (21.5mm)  
      Length  0.61" (15.5mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-3PF  
      Polarization  N-Channel  
      Power Dissipation  160 W  
      Resistance, Drain to Source On  0.37 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  78 ns  
      Time, Turn-On Delay  26 ns  
      Transconductance, Forward  20 S  
      Typical Gate Charge @ Vgs  54 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  600 V  
      Voltage, Drain to Source  600 V  
      Voltage, Forward, Diode  0.93 V  
      Voltage, Gate to Source  ±30 V  
      Width  0.217" (5.5mm)  
    关键词         

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    2SK3528-01R相关搜索

    Capacitance, Input 2280 pF @ 25 V  Fuji Semiconductor Capacitance, Input 2280 pF @ 25 V  MOSFET Transistors Capacitance, Input 2280 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 2280 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±21 A  Fuji Semiconductor Current, Drain ±21 A  MOSFET Transistors Current, Drain ±21 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±21 A   Dimensions 15.5 x 5.5 x 21.5 mm  Fuji Semiconductor Dimensions 15.5 x 5.5 x 21.5 mm  MOSFET Transistors Dimensions 15.5 x 5.5 x 21.5 mm  Fuji Semiconductor MOSFET Transistors Dimensions 15.5 x 5.5 x 21.5 mm   Gate Charge, Total 54 nC  Fuji Semiconductor Gate Charge, Total 54 nC  MOSFET Transistors Gate Charge, Total 54 nC  Fuji Semiconductor MOSFET Transistors Gate Charge, Total 54 nC   Height 0.846" (21.5mm)  Fuji Semiconductor Height 0.846" (21.5mm)  MOSFET Transistors Height 0.846" (21.5mm)  Fuji Semiconductor MOSFET Transistors Height 0.846" (21.5mm)   Length 0.61" (15.5mm)  Fuji Semiconductor Length 0.61" (15.5mm)  MOSFET Transistors Length 0.61" (15.5mm)  Fuji Semiconductor MOSFET Transistors Length 0.61" (15.5mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Package Type TO-3PF  Fuji Semiconductor Package Type TO-3PF  MOSFET Transistors Package Type TO-3PF  Fuji Semiconductor MOSFET Transistors Package Type TO-3PF   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 160 W  Fuji Semiconductor Power Dissipation 160 W  MOSFET Transistors Power Dissipation 160 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 160 W   Resistance, Drain to Source On 0.37 Ω  Fuji Semiconductor Resistance, Drain to Source On 0.37 Ω  MOSFET Transistors Resistance, Drain to Source On 0.37 Ω  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 0.37 Ω   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 78 ns  Fuji Semiconductor Time, Turn-Off Delay 78 ns  MOSFET Transistors Time, Turn-Off Delay 78 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 78 ns   Time, Turn-On Delay 26 ns  Fuji Semiconductor Time, Turn-On Delay 26 ns  MOSFET Transistors Time, Turn-On Delay 26 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 26 ns   Transconductance, Forward 20 S  Fuji Semiconductor Transconductance, Forward 20 S  MOSFET Transistors Transconductance, Forward 20 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 20 S   Typical Gate Charge @ Vgs 54 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 54 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 54 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 54 nC @ 10 V   Voltage, Breakdown, Drain to Source 600 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 600 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 600 V   Voltage, Drain to Source 600 V  Fuji Semiconductor Voltage, Drain to Source 600 V  MOSFET Transistors Voltage, Drain to Source 600 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 600 V   Voltage, Forward, Diode 0.93 V  Fuji Semiconductor Voltage, Forward, Diode 0.93 V  MOSFET Transistors Voltage, Forward, Diode 0.93 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.93 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Width 0.217" (5.5mm)  Fuji Semiconductor Width 0.217" (5.5mm)  MOSFET Transistors Width 0.217" (5.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.217" (5.5mm)  
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