MBR10100-E3/4W产品概述
Features:
Trench MOS Schottky technology
Lower Power Losses, High Efficiency
Low Forward Voltage Drop
High Forward Surge Capability
High Frequency Operation
Meets MSL Level 1, Per J-STD-020, LF Maximum Peak of 245°C (For TO-263AB Package)
Solder Dip 260°C, 40 s (For TO-220AC and ITO-220AC Package)
Component in Accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications:
For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application.
Datasheet
