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Specifically designed for Automotive applications, ID = 75 A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety
of other applications.

Features:

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed Up to T_j Max.

Lead-Free

Brand/Series	HEXFET Series
Capacitance, Input	7960 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Dual Drain
Current, Drain	210 A
Dimensions	10.67 x 9.65 x 4.83 mm
Gate Charge, Total	190 nC
Height	0.19" (4.83mm)
Length	0.42" (10.67mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	3
Package Type	D2PAK
Polarization	N-Channel
Power Dissipation	300 W
Resistance, Drain to Source On	3.3 mΩ
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +175 °C
Time, Turn-Off Delay	93 ns
Time, Turn-On Delay	150 ns
Transconductance, Forward	75 S
Typical Gate Charge @ Vgs	190 nC @ 10 V
Voltage, Breakdown, Drain to Source	55 V
Voltage, Drain to Source	55 V
Voltage, Forward, Diode	1.3 V
Voltage, Gate to Source	±20 V
Width	0.38" (9.65mm)
关键词

Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 7960 pF @ 25 V  International Rectifier Capacitance, Input 7960 pF @ 25 V  MOSFET Transistors Capacitance, Input 7960 pF @ 25 V  International Rectifier MOSFET Transistors Capacitance, Input 7960 pF @ 25 V   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N  International Rectifier Channel Type N  MOSFET Transistors Channel Type N  International Rectifier MOSFET Transistors Channel Type N   Configuration Dual Drain  International Rectifier Configuration Dual Drain  MOSFET Transistors Configuration Dual Drain  International Rectifier MOSFET Transistors Configuration Dual Drain   Current, Drain 210 A  International Rectifier Current, Drain 210 A  MOSFET Transistors Current, Drain 210 A  International Rectifier MOSFET Transistors Current, Drain 210 A   Dimensions 10.67 x 9.65 x 4.83 mm  International Rectifier Dimensions 10.67 x 9.65 x 4.83 mm  MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm  International Rectifier MOSFET Transistors Dimensions 10.67 x 9.65 x 4.83 mm   Gate Charge, Total 190 nC  International Rectifier Gate Charge, Total 190 nC  MOSFET Transistors Gate Charge, Total 190 nC  International Rectifier MOSFET Transistors Gate Charge, Total 190 nC   Height 0.19" (4.83mm)  International Rectifier Height 0.19" (4.83mm)  MOSFET Transistors Height 0.19" (4.83mm)  International Rectifier MOSFET Transistors Height 0.19" (4.83mm)   Length 0.42" (10.67mm)  International Rectifier Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  International Rectifier MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  International Rectifier Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  International Rectifier MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  International Rectifier Number of Pins 3  MOSFET Transistors Number of Pins 3  International Rectifier MOSFET Transistors Number of Pins 3   Package Type D2PAK  International Rectifier Package Type D2PAK  MOSFET Transistors Package Type D2PAK  International Rectifier MOSFET Transistors Package Type D2PAK   Polarization N-Channel  International Rectifier Polarization N-Channel  MOSFET Transistors Polarization N-Channel  International Rectifier MOSFET Transistors Polarization N-Channel   Power Dissipation 300 W  International Rectifier Power Dissipation 300 W  MOSFET Transistors Power Dissipation 300 W  International Rectifier MOSFET Transistors Power Dissipation 300 W   Resistance, Drain to Source On 3.3 mΩ  International Rectifier Resistance, Drain to Source On 3.3 mΩ  MOSFET Transistors Resistance, Drain to Source On 3.3 mΩ  International Rectifier MOSFET Transistors Resistance, Drain to Source On 3.3 mΩ   Temperature, Operating, Maximum +175 °C  International Rectifier Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  International Rectifier Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 93 ns  International Rectifier Time, Turn-Off Delay 93 ns  MOSFET Transistors Time, Turn-Off Delay 93 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 93 ns   Time, Turn-On Delay 150 ns  International Rectifier Time, Turn-On Delay 150 ns  MOSFET Transistors Time, Turn-On Delay 150 ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 150 ns   Transconductance, Forward 75 S  International Rectifier Transconductance, Forward 75 S  MOSFET Transistors Transconductance, Forward 75 S  International Rectifier MOSFET Transistors Transconductance, Forward 75 S   Typical Gate Charge @ Vgs 190 nC @ 10 V  International Rectifier Typical Gate Charge @ Vgs 190 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 190 nC @ 10 V  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 190 nC @ 10 V   Voltage, Breakdown, Drain to Source 55 V  International Rectifier Voltage, Breakdown, Drain to Source 55 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 55 V   Voltage, Drain to Source 55 V  International Rectifier Voltage, Drain to Source 55 V  MOSFET Transistors Voltage, Drain to Source 55 V  International Rectifier MOSFET Transistors Voltage, Drain to Source 55 V   Voltage, Forward, Diode 1.3 V  International Rectifier Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.38" (9.65mm)  International Rectifier Width 0.38" (9.65mm)  MOSFET Transistors Width 0.38" (9.65mm)  International Rectifier MOSFET Transistors Width 0.38" (9.65mm)