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IRG4BC20UPBF - 

600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE

International Rectifier IRG4BC20UPBF
声明：图片仅供参考，请以实物为准！
制造商产品编号：
IRG4BC20UPBF
仓库库存编号：
70017062
技术数据表：
View IRG4BC20UPBF Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

IRG4BC20UPBF产品概述

Single IGBT up to 20A, Infineon
optimized IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilize FRED diodes optimized to provide the best performance with IGBTs

IRG4BC20UPBF产品信息

  Capacitance, Gate  530 pF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  13 A  
  Current, Continuous Collector  13 A  
  Dimensions  10.67 x 4.83 x 16.51 mm  
  Energy Rating  5 mJ  
  Height  0.65" (16.51mm)  
  Length  0.42" (10.67mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-220AB  
  Polarity  N-Channel  
  Power Dissipation  60 W  
  Resistance, Thermal, Junction to Case  2.1 °C/W  
  Speed, Switching  40 kHz  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Type  Ultrafast  
  Voltage, Collector to Emitter  600 V  
  Voltage, Collector to Emitter Shorted  600 V  
  Voltage, Gate to Emitter  ±20 V  
  Width  0.19" (4.83mm)  
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Capacitance, Gate 530 pF  International Rectifier Capacitance, Gate 530 pF  IGBT Transistors Capacitance, Gate 530 pF  International Rectifier IGBT Transistors Capacitance, Gate 530 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 13 A  International Rectifier Current, Collector 13 A  IGBT Transistors Current, Collector 13 A  International Rectifier IGBT Transistors Current, Collector 13 A   Current, Continuous Collector 13 A  International Rectifier Current, Continuous Collector 13 A  IGBT Transistors Current, Continuous Collector 13 A  International Rectifier IGBT Transistors Current, Continuous Collector 13 A   Dimensions 10.67 x 4.83 x 16.51 mm  International Rectifier Dimensions 10.67 x 4.83 x 16.51 mm  IGBT Transistors Dimensions 10.67 x 4.83 x 16.51 mm  International Rectifier IGBT Transistors Dimensions 10.67 x 4.83 x 16.51 mm   Energy Rating 5 mJ  International Rectifier Energy Rating 5 mJ  IGBT Transistors Energy Rating 5 mJ  International Rectifier IGBT Transistors Energy Rating 5 mJ   Height 0.65" (16.51mm)  International Rectifier Height 0.65" (16.51mm)  IGBT Transistors Height 0.65" (16.51mm)  International Rectifier IGBT Transistors Height 0.65" (16.51mm)   Length 0.42" (10.67mm)  International Rectifier Length 0.42" (10.67mm)  IGBT Transistors Length 0.42" (10.67mm)  International Rectifier IGBT Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-220AB  International Rectifier Package Type TO-220AB  IGBT Transistors Package Type TO-220AB  International Rectifier IGBT Transistors Package Type TO-220AB   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 60 W  International Rectifier Power Dissipation 60 W  IGBT Transistors Power Dissipation 60 W  International Rectifier IGBT Transistors Power Dissipation 60 W   Resistance, Thermal, Junction to Case 2.1 °C/W  International Rectifier Resistance, Thermal, Junction to Case 2.1 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 2.1 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 2.1 °C/W   Speed, Switching 40 kHz  International Rectifier Speed, Switching 40 kHz  IGBT Transistors Speed, Switching 40 kHz  International Rectifier IGBT Transistors Speed, Switching 40 kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Type Ultrafast  International Rectifier Type Ultrafast  IGBT Transistors Type Ultrafast  International Rectifier IGBT Transistors Type Ultrafast   Voltage, Collector to Emitter 600 V  International Rectifier Voltage, Collector to Emitter 600 V  IGBT Transistors Voltage, Collector to Emitter 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  International Rectifier Voltage, Collector to Emitter Shorted 600 V  IGBT Transistors Voltage, Collector to Emitter Shorted 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.19" (4.83mm)  International Rectifier Width 0.19" (4.83mm)  IGBT Transistors Width 0.19" (4.83mm)  International Rectifier IGBT Transistors Width 0.19" (4.83mm)  
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