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Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

Capacitance, Gate	3300 pF
Channel Type	N
Configuration	Dual
Current, Collector	51 A
Current, Continuous Collector	51 A
Dimensions	15.87 x 5.31 x 20.70 mm
Energy Rating	3.97 mJ
Height	0.815" (20.7mm)
Length	0.625" <5/8> (15.875mm)
Mounting Type	Through Hole
Number of Pins	3
Package Type	TO-247AC
Polarity	N-Channel
Power Dissipation	200 W
Resistance, Thermal, Junction to Case	0.64 °C/W
Speed, Switching	30-150 Khz
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Transistor Type	NPN
Type	Warp
Voltage, Collector to Emitter	2.7 V
Voltage, Collector to Emitter Shorted	900 V
Voltage, Gate to Emitter	±20 V
Width	0.209" (5.31mm)
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• International Rectifier
  900V WARP 20-100 KHZ DISCRETE IGBT IN ATO-247AC PACKAGE
  
  型号：IRG4PF50WPBF
  仓库库存编号：70017078
  
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• Vishay PCS
  Diode, HEXFRED, 1200V 16A, TO-247 (2 Pin)
  
  型号：VS-HFA16PB120PBF
  仓库库存编号：70078842
  
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• Vishay PCS
  Diode, HEXFRED, 1200V 16A, TO-247 (2 Pin)
  
  型号：VS-HFA16PB120PBF
  仓库库存编号：70078842
  
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• Vishay PCS
  MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.27Ohm; ID 20A; TO-247AC; PD 280W; VGS +/-20V
  
  型号：IRFP460PBF
  仓库库存编号：70078944
  
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• Vishay PCS
  MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.6Ohm; ID 11A; TO-247AC; PD 180W; VGS +/-20V
  
  型号：IRFPC50PBF
  仓库库存编号：70078948
  
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• ON Semiconductor
  Power Rectifier, Ultrafast, 1000 V, 8 A, TO-220AB, Pb-Free
  
  型号：MUR8100EG
  仓库库存编号：70100057
  
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Capacitance, Gate 3300 pF  International Rectifier Capacitance, Gate 3300 pF  IGBT Transistors Capacitance, Gate 3300 pF  International Rectifier IGBT Transistors Capacitance, Gate 3300 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Dual  International Rectifier Configuration Dual  IGBT Transistors Configuration Dual  International Rectifier IGBT Transistors Configuration Dual   Current, Collector 51 A  International Rectifier Current, Collector 51 A  IGBT Transistors Current, Collector 51 A  International Rectifier IGBT Transistors Current, Collector 51 A   Current, Continuous Collector 51 A  International Rectifier Current, Continuous Collector 51 A  IGBT Transistors Current, Continuous Collector 51 A  International Rectifier IGBT Transistors Current, Continuous Collector 51 A   Dimensions 15.87 x 5.31 x 20.70 mm  International Rectifier Dimensions 15.87 x 5.31 x 20.70 mm  IGBT Transistors Dimensions 15.87 x 5.31 x 20.70 mm  International Rectifier IGBT Transistors Dimensions 15.87 x 5.31 x 20.70 mm   Energy Rating 3.97 mJ  International Rectifier Energy Rating 3.97 mJ  IGBT Transistors Energy Rating 3.97 mJ  International Rectifier IGBT Transistors Energy Rating 3.97 mJ   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  IGBT Transistors Height 0.815" (20.7mm)  International Rectifier IGBT Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  IGBT Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  IGBT Transistors Package Type TO-247AC  International Rectifier IGBT Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 200 W  International Rectifier Power Dissipation 200 W  IGBT Transistors Power Dissipation 200 W  International Rectifier IGBT Transistors Power Dissipation 200 W   Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.64 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.64 °C/W   Speed, Switching 30-150 Khz  International Rectifier Speed, Switching 30-150 Khz  IGBT Transistors Speed, Switching 30-150 Khz  International Rectifier IGBT Transistors Speed, Switching 30-150 Khz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  International Rectifier Transistor Type NPN  IGBT Transistors Transistor Type NPN  International Rectifier IGBT Transistors Transistor Type NPN   Type Warp  International Rectifier Type Warp  IGBT Transistors Type Warp  International Rectifier IGBT Transistors Type Warp   Voltage, Collector to Emitter 2.7 V  International Rectifier Voltage, Collector to Emitter 2.7 V  IGBT Transistors Voltage, Collector to Emitter 2.7 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 2.7 V   Voltage, Collector to Emitter Shorted 900 V  International Rectifier Voltage, Collector to Emitter Shorted 900 V  IGBT Transistors Voltage, Collector to Emitter Shorted 900 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 900 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  IGBT Transistors Width 0.209" (5.31mm)  International Rectifier IGBT Transistors Width 0.209" (5.31mm)