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IRG4PH40UPBF - 

1200V ULTRAFAST 5-40 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE

International Rectifier IRG4PH40UPBF
声明：图片仅供参考，请以实物为准！
制造商产品编号：
IRG4PH40UPBF
仓库库存编号：
70017080
技术数据表：
View IRG4PH40UPBF Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

IRG4PH40UPBF产品概述

Single IGBT over 21A, Infineon
optimized IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. utilizing FRED diodes optimized to provide the best performance with IGBT's

IRG4PH40UPBF产品信息

  Capacitance, Gate  1800 pF  
  Channel Type  N  
  Configuration  Single  
  Current, Collector  41 A  
  Current, Continuous Collector  41 A  
  Dimensions  15.87 X 5.31 X 20.70 mm  
  Energy Rating  270 mJ  
  Height  0.815" (20.7mm)  
  Length  0.625" <5/8> (15.875mm)  
  Mounting Type  Through Hole  
  Number of Pins  3  
  Package Type  TO-247AC  
  Polarity  N-Channel  
  Power Dissipation  160 W  
  Resistance, Thermal, Junction to Case  0.77 °C/W  
  Speed, Switching  40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  Ultrafast  
  Voltage, Collector to Emitter  1200 V  
  Voltage, Collector to Emitter Shorted  1200 V  
  Voltage, Gate to Emitter  ±20 V  
  Width  0.209" (5.31mm)  
关键词         

IRG4PH40UPBF相关搜索

Capacitance, Gate 1800 pF  International Rectifier Capacitance, Gate 1800 pF  IGBT Transistors Capacitance, Gate 1800 pF  International Rectifier IGBT Transistors Capacitance, Gate 1800 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Collector 41 A  International Rectifier Current, Collector 41 A  IGBT Transistors Current, Collector 41 A  International Rectifier IGBT Transistors Current, Collector 41 A   Current, Continuous Collector 41 A  International Rectifier Current, Continuous Collector 41 A  IGBT Transistors Current, Continuous Collector 41 A  International Rectifier IGBT Transistors Current, Continuous Collector 41 A   Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier Dimensions 15.87 X 5.31 X 20.70 mm  IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm  International Rectifier IGBT Transistors Dimensions 15.87 X 5.31 X 20.70 mm   Energy Rating 270 mJ  International Rectifier Energy Rating 270 mJ  IGBT Transistors Energy Rating 270 mJ  International Rectifier IGBT Transistors Energy Rating 270 mJ   Height 0.815" (20.7mm)  International Rectifier Height 0.815" (20.7mm)  IGBT Transistors Height 0.815" (20.7mm)  International Rectifier IGBT Transistors Height 0.815" (20.7mm)   Length 0.625" <5/8> (15.875mm)  International Rectifier Length 0.625" <5/8> (15.875mm)  IGBT Transistors Length 0.625" <5/8> (15.875mm)  International Rectifier IGBT Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-247AC  International Rectifier Package Type TO-247AC  IGBT Transistors Package Type TO-247AC  International Rectifier IGBT Transistors Package Type TO-247AC   Polarity N-Channel  International Rectifier Polarity N-Channel  IGBT Transistors Polarity N-Channel  International Rectifier IGBT Transistors Polarity N-Channel   Power Dissipation 160 W  International Rectifier Power Dissipation 160 W  IGBT Transistors Power Dissipation 160 W  International Rectifier IGBT Transistors Power Dissipation 160 W   Resistance, Thermal, Junction to Case 0.77 °C/W  International Rectifier Resistance, Thermal, Junction to Case 0.77 °C/W  IGBT Transistors Resistance, Thermal, Junction to Case 0.77 °C/W  International Rectifier IGBT Transistors Resistance, Thermal, Junction to Case 0.77 °C/W   Speed, Switching 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  International Rectifier Speed, Switching 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  IGBT Transistors Speed, Switching 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz  International Rectifier IGBT Transistors Speed, Switching 40 (Hard Switching), <special id="6"/>special id="80"/>200 (Resonant Mode) kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  International Rectifier Transistor Type NPN  IGBT Transistors Transistor Type NPN  International Rectifier IGBT Transistors Transistor Type NPN   Type Ultrafast  International Rectifier Type Ultrafast  IGBT Transistors Type Ultrafast  International Rectifier IGBT Transistors Type Ultrafast   Voltage, Collector to Emitter 1200 V  International Rectifier Voltage, Collector to Emitter 1200 V  IGBT Transistors Voltage, Collector to Emitter 1200 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  International Rectifier Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistors Voltage, Collector to Emitter Shorted 1200 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.209" (5.31mm)  International Rectifier Width 0.209" (5.31mm)  IGBT Transistors Width 0.209" (5.31mm)  International Rectifier IGBT Transistors Width 0.209" (5.31mm)  
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