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Co-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

Capacitance, Gate	850 pF
Channel Type	N
Configuration	Single
Current, Continuous Collector	31 A
Dimensions	10.66 x 4.82 x 16.51 mm
Height	0.65" (16.51mm)
Length	0.419" (10.66mm)
Mounting Type	Through Hole
Number of Pins	3
Package Type	TO-220AB
Power Dissipation	208 W
Speed, Switching	30 kHz
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Voltage, Collector to Emitter	600 V
Voltage, Gate to Emitter	±20 V
Width	0.19" (4.82mm)
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• International Rectifier
  600V ULTRAFAST 10-30 KHZ COPACK IGBT INA TO-220AB PACKAGE
  
  型号：IRGB10B60KDPBF
  仓库库存编号：70017214
  
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Capacitance, Gate 850 pF  International Rectifier Capacitance, Gate 850 pF  IGBT Transistors Capacitance, Gate 850 pF  International Rectifier IGBT Transistors Capacitance, Gate 850 pF   Channel Type N  International Rectifier Channel Type N  IGBT Transistors Channel Type N  International Rectifier IGBT Transistors Channel Type N   Configuration Single  International Rectifier Configuration Single  IGBT Transistors Configuration Single  International Rectifier IGBT Transistors Configuration Single   Current, Continuous Collector 31 A  International Rectifier Current, Continuous Collector 31 A  IGBT Transistors Current, Continuous Collector 31 A  International Rectifier IGBT Transistors Current, Continuous Collector 31 A   Dimensions 10.66 x 4.82 x 16.51 mm  International Rectifier Dimensions 10.66 x 4.82 x 16.51 mm  IGBT Transistors Dimensions 10.66 x 4.82 x 16.51 mm  International Rectifier IGBT Transistors Dimensions 10.66 x 4.82 x 16.51 mm   Height 0.65" (16.51mm)  International Rectifier Height 0.65" (16.51mm)  IGBT Transistors Height 0.65" (16.51mm)  International Rectifier IGBT Transistors Height 0.65" (16.51mm)   Length 0.419" (10.66mm)  International Rectifier Length 0.419" (10.66mm)  IGBT Transistors Length 0.419" (10.66mm)  International Rectifier IGBT Transistors Length 0.419" (10.66mm)   Mounting Type Through Hole  International Rectifier Mounting Type Through Hole  IGBT Transistors Mounting Type Through Hole  International Rectifier IGBT Transistors Mounting Type Through Hole   Number of Pins 3  International Rectifier Number of Pins 3  IGBT Transistors Number of Pins 3  International Rectifier IGBT Transistors Number of Pins 3   Package Type TO-220AB  International Rectifier Package Type TO-220AB  IGBT Transistors Package Type TO-220AB  International Rectifier IGBT Transistors Package Type TO-220AB   Power Dissipation 208 W  International Rectifier Power Dissipation 208 W  IGBT Transistors Power Dissipation 208 W  International Rectifier IGBT Transistors Power Dissipation 208 W   Speed, Switching 30 kHz  International Rectifier Speed, Switching 30 kHz  IGBT Transistors Speed, Switching 30 kHz  International Rectifier IGBT Transistors Speed, Switching 30 kHz   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  IGBT Transistors Temperature, Operating, Maximum +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  IGBT Transistors Temperature, Operating, Minimum -55 °C  International Rectifier IGBT Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  IGBT Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier IGBT Transistors Temperature, Operating, Range -55 to +150 °C   Voltage, Collector to Emitter 600 V  International Rectifier Voltage, Collector to Emitter 600 V  IGBT Transistors Voltage, Collector to Emitter 600 V  International Rectifier IGBT Transistors Voltage, Collector to Emitter 600 V   Voltage, Gate to Emitter ±20 V  International Rectifier Voltage, Gate to Emitter ±20 V  IGBT Transistors Voltage, Gate to Emitter ±20 V  International Rectifier IGBT Transistors Voltage, Gate to Emitter ±20 V   Width 0.19" (4.82mm)  International Rectifier Width 0.19" (4.82mm)  IGBT Transistors Width 0.19" (4.82mm)  International Rectifier IGBT Transistors Width 0.19" (4.82mm)