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IRLMS2002TRPBF
IRLMS2002TRPBF -
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.03Ohm; ID 6.5A; Micro6; PD 2W; VGS +/-12V; -55d
声明:图片仅供参考,请以实物为准!
制造商:
International Rectifier
International Rectifier
制造商产品编号:
IRLMS2002TRPBF
仓库库存编号:
70017108
技术数据表:
Datasheet
订购热线:
400-900-3095 0755-21000796, QQ:
800152669
, Email:
sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!
IRLMS2002TRPBF产品概述
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
IRLMS2002TRPBF产品信息
Brand/Series
HEXFET Series
Capacitance, Input
1310 pF @ 15 V
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Current, Drain
6.5 A
Dimensions
3.00 x 1.75 x 1.15 mm
Gate Charge, Total
15 nC
Height
0.045" (1.15mm)
Length
0.118" (3mm)
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
SOT-23
Polarization
N-Channel
Power Dissipation
2 W
Resistance, Drain to Source On
0.045 Ω
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Temperature, Operating, Range
-55 to +150 °C
Time, Turn-Off Delay
36 ns
Time, Turn-On Delay
8.5 ns
Transconductance, Forward
13 S
Typical Gate Charge @ Vgs
15 nC @ 5 V
Voltage, Breakdown, Drain to Source
20 V
Voltage, Drain to Source
20 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate to Source
±12 V
Width
0.069" (1.75mm)
关键词
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制造商 / 说明 / 型号 / 仓库库存编号
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操作
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Varistor; 18.5 V +/- 12%; TRANSIENT VOLTAGE; 14.0 VDC, 10.0 VAC; Cut Tape
型号:
VC060314A300DP
仓库库存编号:
70001163
搜索
AVX
Varistor; 18.5 V +/- 12%; TRANSIENT VOLTAGE; 14.0 VDC, 10.0 VAC; Cut Tape
型号:
VC060314A300DP
仓库库存编号:
70001163
搜索
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APG1608SURKC/T Red LED, 630 nm 1608 (0603) Clear, Rectangle Lens SMD package
型号:
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仓库库存编号:
70062821
搜索
TE Connectivity
Connector, SFP, 20 Position, 30um Gold w/surface treatment
型号:
1888247-1
仓库库存编号:
70084373
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Vishay Dale
Resistor; Thick Film; 0 Ohms; 0.063 W; 0 Ohms Jumper; SMT; 0402; TCR 0 ppm/DegC; CutTape
型号:
CRCW04020000Z0ED
仓库库存编号:
70201139
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Vishay Dale
Resistor; Thick Film; 10 Ohms; 0.125 W; 1%; SMT; 0805; TCR 37 ppm/DegC; Cut Tape
型号:
CRCW080510R0FKEA
仓库库存编号:
70201196
搜索
Vishay Dale
Resistor; Thick Film; 1 Kilohms; 0.25 W; 1%; SMT; 1206; TCR 37 ppm/DegC; Cut Tape
型号:
CRCW12061K00FKEA
仓库库存编号:
70201271
搜索
Vishay Dale
Resistor; Thick Film; 1 Kilohms; 0.25 W; 1%; SMT; 1206; TCR 37 ppm/DegC; Cut Tape
型号:
CRCW12061K00FKEA
仓库库存编号:
70201271
搜索
Vishay Dale
Resistor; Thick Film; 1 Kilohms; 0.25 W; 1%; SMT; 1206; TCR 37 ppm/DegC; Cut Tape
型号:
CRCW12061K00FKEA
仓库库存编号:
70201271
搜索
Panasonic
Resistor; Thick Film; Res 2.2 Megohms; Pwr-Rtg 0.1 W; Tol 1%; SMT; 0603; Cut Tape
型号:
ERJ-3EKF2204V
仓库库存编号:
70265716
搜索
IRLMS2002TRPBF相关搜索
Brand/Series HEXFET Series
International Rectifier Brand/Series HEXFET Series
MOSFET Transistors Brand/Series HEXFET Series
International Rectifier MOSFET Transistors Brand/Series HEXFET Series
Capacitance, Input 1310 pF @ 15 V
International Rectifier Capacitance, Input 1310 pF @ 15 V
MOSFET Transistors Capacitance, Input 1310 pF @ 15 V
International Rectifier MOSFET Transistors Capacitance, Input 1310 pF @ 15 V
Channel Mode Enhancement
International Rectifier Channel Mode Enhancement
MOSFET Transistors Channel Mode Enhancement
International Rectifier MOSFET Transistors Channel Mode Enhancement
Channel Type N
International Rectifier Channel Type N
MOSFET Transistors Channel Type N
International Rectifier MOSFET Transistors Channel Type N
Configuration Single
International Rectifier Configuration Single
MOSFET Transistors Configuration Single
International Rectifier MOSFET Transistors Configuration Single
Current, Drain 6.5 A
International Rectifier Current, Drain 6.5 A
MOSFET Transistors Current, Drain 6.5 A
International Rectifier MOSFET Transistors Current, Drain 6.5 A
Dimensions 3.00 x 1.75 x 1.15 mm
International Rectifier Dimensions 3.00 x 1.75 x 1.15 mm
MOSFET Transistors Dimensions 3.00 x 1.75 x 1.15 mm
International Rectifier MOSFET Transistors Dimensions 3.00 x 1.75 x 1.15 mm
Gate Charge, Total 15 nC
International Rectifier Gate Charge, Total 15 nC
MOSFET Transistors Gate Charge, Total 15 nC
International Rectifier MOSFET Transistors Gate Charge, Total 15 nC
Height 0.045" (1.15mm)
International Rectifier Height 0.045" (1.15mm)
MOSFET Transistors Height 0.045" (1.15mm)
International Rectifier MOSFET Transistors Height 0.045" (1.15mm)
Length 0.118" (3mm)
International Rectifier Length 0.118" (3mm)
MOSFET Transistors Length 0.118" (3mm)
International Rectifier MOSFET Transistors Length 0.118" (3mm)
Mounting Type Surface Mount
International Rectifier Mounting Type Surface Mount
MOSFET Transistors Mounting Type Surface Mount
International Rectifier MOSFET Transistors Mounting Type Surface Mount
Number of Elements per Chip 1
International Rectifier Number of Elements per Chip 1
MOSFET Transistors Number of Elements per Chip 1
International Rectifier MOSFET Transistors Number of Elements per Chip 1
Number of Pins 3
International Rectifier Number of Pins 3
MOSFET Transistors Number of Pins 3
International Rectifier MOSFET Transistors Number of Pins 3
Package Type SOT-23
International Rectifier Package Type SOT-23
MOSFET Transistors Package Type SOT-23
International Rectifier MOSFET Transistors Package Type SOT-23
Polarization N-Channel
International Rectifier Polarization N-Channel
MOSFET Transistors Polarization N-Channel
International Rectifier MOSFET Transistors Polarization N-Channel
Power Dissipation 2 W
International Rectifier Power Dissipation 2 W
MOSFET Transistors Power Dissipation 2 W
International Rectifier MOSFET Transistors Power Dissipation 2 W
Resistance, Drain to Source On 0.045 Ω
International Rectifier Resistance, Drain to Source On 0.045 Ω
MOSFET Transistors Resistance, Drain to Source On 0.045 Ω
International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.045 Ω
Temperature, Operating, Maximum +150 °C
International Rectifier Temperature, Operating, Maximum +150 °C
MOSFET Transistors Temperature, Operating, Maximum +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C
Temperature, Operating, Minimum -55 °C
International Rectifier Temperature, Operating, Minimum -55 °C
MOSFET Transistors Temperature, Operating, Minimum -55 °C
International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C
Temperature, Operating, Range -55 to +150 °C
International Rectifier Temperature, Operating, Range -55 to +150 °C
MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C
Time, Turn-Off Delay 36 ns
International Rectifier Time, Turn-Off Delay 36 ns
MOSFET Transistors Time, Turn-Off Delay 36 ns
International Rectifier MOSFET Transistors Time, Turn-Off Delay 36 ns
Time, Turn-On Delay 8.5 ns
International Rectifier Time, Turn-On Delay 8.5 ns
MOSFET Transistors Time, Turn-On Delay 8.5 ns
International Rectifier MOSFET Transistors Time, Turn-On Delay 8.5 ns
Transconductance, Forward 13 S
International Rectifier Transconductance, Forward 13 S
MOSFET Transistors Transconductance, Forward 13 S
International Rectifier MOSFET Transistors Transconductance, Forward 13 S
Typical Gate Charge @ Vgs 15 nC @ 5 V
International Rectifier Typical Gate Charge @ Vgs 15 nC @ 5 V
MOSFET Transistors Typical Gate Charge @ Vgs 15 nC @ 5 V
International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 15 nC @ 5 V
Voltage, Breakdown, Drain to Source 20 V
International Rectifier Voltage, Breakdown, Drain to Source 20 V
MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V
International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V
Voltage, Drain to Source 20 V
International Rectifier Voltage, Drain to Source 20 V
MOSFET Transistors Voltage, Drain to Source 20 V
International Rectifier MOSFET Transistors Voltage, Drain to Source 20 V
Voltage, Forward, Diode 1.2 V
International Rectifier Voltage, Forward, Diode 1.2 V
MOSFET Transistors Voltage, Forward, Diode 1.2 V
International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.2 V
Voltage, Gate to Source ±12 V
International Rectifier Voltage, Gate to Source ±12 V
MOSFET Transistors Voltage, Gate to Source ±12 V
International Rectifier MOSFET Transistors Voltage, Gate to Source ±12 V
Width 0.069" (1.75mm)
International Rectifier Width 0.069" (1.75mm)
MOSFET Transistors Width 0.069" (1.75mm)
International Rectifier MOSFET Transistors Width 0.069" (1.75mm)
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sales@szcwdz.com
Q Q:
800152669
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m.szcwdz.com
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