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25AA1024-I/SM - 

Microchip 25AA1024-I/SM Serial EEPROM Memory, 1Mbit, 250ns, 1.8 to 5.5V 8-Pin SOIJ

Microchip Technology Inc. 25AA1024-I/SM
声明:图片仅供参考,请以实物为准!
制造商产品编号:
25AA1024-I/SM
仓库库存编号:
70045896
技术数据表:
View 25AA1024-I/SM Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

25AA1024-I/SM产品信息

  Brand/Series  25AA1024 Series  
  Capacitance, Input  7 pF  
  Capacitance, Output  7 pF  
  Current, Input, Leakage  ±1 μA  
  Current, Operating  10 mA (Read), 7 mA (Write)  
  Current, Output, Leakage  ±1 μA  
  Data Retention  >200 yrs.  
  Density  1024K  
  Interface  SPI Bus  
  Memory Type  Serial EEPROM  
  Organization  128K×8  
  Package Type  SOIJ  
  Supply Voltage  1.8 to 5.5 V  
  Temperature, Operating  -40 to +85 °C  
  Time, Access  50 ns  
  Time, Address Hold  500 ns  
  Time, Address Setup  250 ns  
  Time, Fall  20 ns  
  Time, Rise  20 ns  
  Voltage, ESD  4 kV  
  Voltage, Input, High Level  2.8 V  
  Voltage, Input, Low Level  0.36 V  
  Voltage, Output, High Level  1.3 V  
  Voltage, Output, Low Level  0.2 V  
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Brand/Series 25AA1024 Series  Microchip Technology Inc. Brand/Series 25AA1024 Series  EEPROM Memory Chips Brand/Series 25AA1024 Series  Microchip Technology Inc. EEPROM Memory Chips Brand/Series 25AA1024 Series   Capacitance, Input 7 pF  Microchip Technology Inc. Capacitance, Input 7 pF  EEPROM Memory Chips Capacitance, Input 7 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Input 7 pF   Capacitance, Output 7 pF  Microchip Technology Inc. Capacitance, Output 7 pF  EEPROM Memory Chips Capacitance, Output 7 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Output 7 pF   Current, Input, Leakage ±1 μA  Microchip Technology Inc. Current, Input, Leakage ±1 μA  EEPROM Memory Chips Current, Input, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Input, Leakage ±1 μA   Current, Operating 10 mA (Read), 7 mA (Write)  Microchip Technology Inc. Current, Operating 10 mA (Read), 7 mA (Write)  EEPROM Memory Chips Current, Operating 10 mA (Read), 7 mA (Write)  Microchip Technology Inc. EEPROM Memory Chips Current, Operating 10 mA (Read), 7 mA (Write)   Current, Output, Leakage ±1 μA  Microchip Technology Inc. Current, Output, Leakage ±1 μA  EEPROM Memory Chips Current, Output, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Output, Leakage ±1 μA   Data Retention >200 yrs.  Microchip Technology Inc. Data Retention >200 yrs.  EEPROM Memory Chips Data Retention >200 yrs.  Microchip Technology Inc. EEPROM Memory Chips Data Retention >200 yrs.   Density 1024K  Microchip Technology Inc. Density 1024K  EEPROM Memory Chips Density 1024K  Microchip Technology Inc. EEPROM Memory Chips Density 1024K   Interface SPI Bus  Microchip Technology Inc. Interface SPI Bus  EEPROM Memory Chips Interface SPI Bus  Microchip Technology Inc. EEPROM Memory Chips Interface SPI Bus   Memory Type Serial EEPROM  Microchip Technology Inc. Memory Type Serial EEPROM  EEPROM Memory Chips Memory Type Serial EEPROM  Microchip Technology Inc. EEPROM Memory Chips Memory Type Serial EEPROM   Organization 128K×8  Microchip Technology Inc. Organization 128K×8  EEPROM Memory Chips Organization 128K×8  Microchip Technology Inc. EEPROM Memory Chips Organization 128K×8   Package Type SOIJ  Microchip Technology Inc. Package Type SOIJ  EEPROM Memory Chips Package Type SOIJ  Microchip Technology Inc. EEPROM Memory Chips Package Type SOIJ   Supply Voltage 1.8 to 5.5 V  Microchip Technology Inc. Supply Voltage 1.8 to 5.5 V  EEPROM Memory Chips Supply Voltage 1.8 to 5.5 V  Microchip Technology Inc. EEPROM Memory Chips Supply Voltage 1.8 to 5.5 V   Temperature, Operating -40 to +85 °C  Microchip Technology Inc. Temperature, Operating -40 to +85 °C  EEPROM Memory Chips Temperature, Operating -40 to +85 °C  Microchip Technology Inc. EEPROM Memory Chips Temperature, Operating -40 to +85 °C   Time, Access 50 ns  Microchip Technology Inc. Time, Access 50 ns  EEPROM Memory Chips Time, Access 50 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Access 50 ns   Time, Address Hold 500 ns  Microchip Technology Inc. Time, Address Hold 500 ns  EEPROM Memory Chips Time, Address Hold 500 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Address Hold 500 ns   Time, Address Setup 250 ns  Microchip Technology Inc. Time, Address Setup 250 ns  EEPROM Memory Chips Time, Address Setup 250 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Address Setup 250 ns   Time, Fall 20 ns  Microchip Technology Inc. Time, Fall 20 ns  EEPROM Memory Chips Time, Fall 20 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Fall 20 ns   Time, Rise 20 ns  Microchip Technology Inc. Time, Rise 20 ns  EEPROM Memory Chips Time, Rise 20 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Rise 20 ns   Voltage, ESD 4 kV  Microchip Technology Inc. Voltage, ESD 4 kV  EEPROM Memory Chips Voltage, ESD 4 kV  Microchip Technology Inc. EEPROM Memory Chips Voltage, ESD 4 kV   Voltage, Input, High Level 2.8 V  Microchip Technology Inc. Voltage, Input, High Level 2.8 V  EEPROM Memory Chips Voltage, Input, High Level 2.8 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, High Level 2.8 V   Voltage, Input, Low Level 0.36 V  Microchip Technology Inc. Voltage, Input, Low Level 0.36 V  EEPROM Memory Chips Voltage, Input, Low Level 0.36 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, Low Level 0.36 V   Voltage, Output, High Level 1.3 V  Microchip Technology Inc. Voltage, Output, High Level 1.3 V  EEPROM Memory Chips Voltage, Output, High Level 1.3 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Output, High Level 1.3 V   Voltage, Output, Low Level 0.2 V  Microchip Technology Inc. Voltage, Output, Low Level 0.2 V  EEPROM Memory Chips Voltage, Output, Low Level 0.2 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Output, Low Level 0.2 V  
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