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NTE121 - 

TRANSISTOR PNP GERMANIUM 60V IC-10A TO-3 AUDIO POWER AMP

NTE Electronics, Inc. NTE121
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE121
仓库库存编号：
70214650
技术数据表：
View NTE121 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE121产品概述

Germanium PNP Transistor Audio Frequency Power Amplifier
The NTE121 is a germanium PNP alloy junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

NTE121产品信息

  Amplifier Type  Audio Frequency Power  
  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  10 A  
  Current, Emitter  10 A  
  Current, Gain  50  
  Diameter  22.2 mm  
  Dimensions  22.2 Dia. x 8.89 H mm  
  Frequency, Operating  300 kHz  
  Height  0.35" (8.89mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-3  
  Polarity  PNP  
  Power Dissipation  90 W  
  Primary Type  Ge  
  Temperature, Operating, Maximum  +100 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +100 °C  
  Transistor Polarity  PNP  
  Transistor Type  PNP  
  Type  AF, Amplifier  
  Voltage, Breakdown, Collector to Emitter  45 V  
  Voltage, Collector to Base  60 V  
  Voltage, Collector to Emitter  45 V  
  Voltage, Collector to Emitter, Saturation  0.3 V  
  Voltage, Emitter to Base  10 V  
  Voltage, Saturation, Collector to Emitter  0.3 V  
关键词         

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A   Current, Gain 50  NTE Electronics, Inc. Current, Gain 50  Bipolar Transistors Current, Gain 50  NTE Electronics, Inc. Bipolar Transistors Current, Gain 50   Diameter 22.2 mm  NTE Electronics, Inc. Diameter 22.2 mm  Bipolar Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Frequency, Operating 300 kHz  NTE Electronics, Inc. Frequency, Operating 300 kHz  Bipolar Transistors Frequency, Operating 300 kHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 300 kHz   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity PNP  NTE Electronics, Inc. Polarity PNP  Bipolar Transistors Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Polarity PNP   Power Dissipation 90 W  NTE Electronics, Inc. Power Dissipation 90 W  Bipolar Transistors Power Dissipation 90 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 90 W   Primary Type Ge  NTE Electronics, Inc. Primary Type Ge  Bipolar Transistors Primary Type Ge  NTE Electronics, Inc. Bipolar Transistors Primary Type Ge   Temperature, Operating, Maximum +100 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +100 °C  Bipolar Transistors Temperature, Operating, Maximum +100 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +100 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +100 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +100 °C  Bipolar Transistors Temperature, Operating, Range -55 to +100 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +100 °C   Transistor Polarity PNP  NTE Electronics, Inc. Transistor Polarity PNP  Bipolar Transistors Transistor Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity PNP   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type AF, Amplifier  NTE Electronics, Inc. Type AF, Amplifier  Bipolar Transistors Type AF, Amplifier  NTE Electronics, Inc. Bipolar Transistors Type AF, Amplifier   Voltage, Breakdown, Collector to Emitter 45 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 45 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 45 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 45 V   Voltage, Collector to Base 60 V  NTE Electronics, Inc. Voltage, Collector to Base 60 V  Bipolar Transistors Voltage, Collector to Base 60 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 60 V   Voltage, Collector to Emitter 45 V  NTE Electronics, Inc. Voltage, Collector to Emitter 45 V  Bipolar Transistors Voltage, Collector to Emitter 45 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 45 V   Voltage, Collector to Emitter, Saturation 0.3 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.3 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.3 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.3 V   Voltage, Emitter to Base 10 V  NTE Electronics, Inc. Voltage, Emitter to Base 10 V  Bipolar Transistors Voltage, Emitter to Base 10 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 10 V   Voltage, Saturation, Collector to Emitter 0.3 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.3 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.3 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.3 V  
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