amphenol代理商
专业销售Amphenol（安费诺）全系列产品-英国2号仓库
库存查询
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索：    
热门搜索词:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

NTE181 - 

TRANSISTOR NPN SILICON 100V 30AMP TO-3 CASE HIGH POWER AUDIO AMP

NTE Electronics, Inc. NTE181
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE181
仓库库存编号：
70214676
技术数据表：
View NTE181 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE181产品概述

Silicon Power Transistor High Power Audio Amplifiers

NTE181产品信息

  Brand/Series  Transistor Series  
  Complement to  PNP  
  Configuration  Common Base  
  Current, Collector  30 A  
  Current, Continuous Collector  30 A  
  Current, Gain  25  
  Device Dissipation  200 W  
  Diameter  22.2 mm  
  Dimensions  22.2 Dia. x 8.89 H mm  
  Frequency, Operating  2 MHz  
  Gain, DC Current, Maximum  100  
  Gain, DC Current, Minimum  25 mA  
  Height  0.35" (8.89mm)  
  Material  Si  
  Material Type  Silicon  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-3  
  Polarity  NPN  
  Power Dissipation  200 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.875 °C/W  
  Temperature Range, Junction, Operating  -65 to +200 °C  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Audio Amplifier, Power  
  Voltage, Breakdown, Collector to Emitter  100 V  
  Voltage, Collector to Base  100 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  0.8 V  
  Voltage, Emitter to Base  4 V  
  Voltage, Saturation, Base to Emitter  1.3 V  
关键词         

NTE181客户还搜索了

  • 参考图片
  • 制造商 / 说明 / 型号 / 仓库库存编号
  • PDF
  • 操作

NTE181相关搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to PNP  NTE Electronics, Inc. Complement to PNP  Bipolar Transistors Complement to PNP  NTE Electronics, Inc. Bipolar Transistors Complement to PNP   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 30 A  NTE Electronics, Inc. Current, Collector 30 A  Bipolar Transistors Current, Collector 30 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 30 A   Current, Continuous Collector 30 A  NTE Electronics, Inc. Current, Continuous Collector 30 A  Bipolar Transistors Current, Continuous Collector 30 A  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 30 A   Current, Gain 25  NTE Electronics, Inc. Current, Gain 25  Bipolar Transistors Current, Gain 25  NTE Electronics, Inc. Bipolar Transistors Current, Gain 25   Device Dissipation 200 W  NTE Electronics, Inc. Device Dissipation 200 W  Bipolar Transistors Device Dissipation 200 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 200 W   Diameter 22.2 mm  NTE Electronics, Inc. Diameter 22.2 mm  Bipolar Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Frequency, Operating 2 MHz  NTE Electronics, Inc. Frequency, Operating 2 MHz  Bipolar Transistors Frequency, Operating 2 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 2 MHz   Gain, DC Current, Maximum 100  NTE Electronics, Inc. Gain, DC Current, Maximum 100  Bipolar Transistors Gain, DC Current, Maximum 100  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 100   Gain, DC Current, Minimum 25 mA  NTE Electronics, Inc. Gain, DC Current, Minimum 25 mA  Bipolar Transistors Gain, DC Current, Minimum 25 mA  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 25 mA   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 200 W  NTE Electronics, Inc. Power Dissipation 200 W  Bipolar Transistors Power Dissipation 200 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 200 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.875 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.875 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 0.875 °C/W   Temperature Range, Junction, Operating -65 to +200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to +200 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to +200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Audio Amplifier, Power  NTE Electronics, Inc. Type Audio Amplifier, Power  Bipolar Transistors Type Audio Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Audio Amplifier, Power   Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 100 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 100 V   Voltage, Collector to Base 100 V  NTE Electronics, Inc. Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 0.8 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.8 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.8 V   Voltage, Emitter to Base 4 V  NTE Electronics, Inc. Voltage, Emitter to Base 4 V  Bipolar Transistors Voltage, Emitter to Base 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 4 V   Voltage, Saturation, Base to Emitter 1.3 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.3 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.3 V  
电话:400-900-3095
QQ:800152669
关于我们 | Amphenol简介 | Amphenol产品 | Amphenol产品应用 | Amphenol动态 | 按系列选型 | 按产品规格选型 | Amphenol选型手册 | 付款方式 | 联系我们
Copyright © 2017 www.amphenol-connect.com All Rights Reserved. 技术支持：电子元器件 ICP备案证书号:粤ICP备11103613号