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NTE194 - 

TRANSISTOR NPN SILICON 180V IC-0.6A HIGH VOLTAGE AMP HIGH SPEED SWITCH

NTE Electronics, Inc. NTE194
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE194
仓库库存编号：
70215730
技术数据表：
View NTE194 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE194产品概述

Silicon NPN Transistor, High Voltage Video Output, +200°C Operating Junction Temperature

NTE194产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  600 mA  
  Current, Gain  30  
  Device Dissipation  350 mW  
  Dimensions  5.2 x 4.2 x 5.33 mm  
  Frequency, Operating  100 to 300 MHz  
  Gain, DC Current, Maximum  250  
  Gain, DC Current, Minimum  80  
  Height  0.21" (5.33mm)  
  Length  0.204" (5.2mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarity  NPN  
  Power Dissipation  350 mW  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  125 °C/W  
  Temperature, Junction, Operating  -55 to +150 °C  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Thermal Resistance, Junction to Ambient  357 °C⁄W  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Audio Amplifier, Power  
  Voltage, Breakdown, Collector to Emitter  180 V  
  Voltage, Collector to Base  180 V  
  Voltage, Collector to Emitter  160 V  
  Voltage, Collector to Emitter, Saturation  0.2 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Base to Emitter  1 V  
  Width  0.165" (4.2mm)  
关键词         

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Inc. Dimensions 5.2 x 4.2 x 5.33 mm  Bipolar Transistors Dimensions 5.2 x 4.2 x 5.33 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 5.2 x 4.2 x 5.33 mm   Frequency, Operating 100 to 300 MHz  NTE Electronics, Inc. Frequency, Operating 100 to 300 MHz  Bipolar Transistors Frequency, Operating 100 to 300 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 100 to 300 MHz   Gain, DC Current, Maximum 250  NTE Electronics, Inc. Gain, DC Current, Maximum 250  Bipolar Transistors Gain, DC Current, Maximum 250  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 250   Gain, DC Current, Minimum 80  NTE Electronics, Inc. Gain, DC Current, Minimum 80  Bipolar Transistors Gain, DC Current, Minimum 80  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 80   Height 0.21" (5.33mm)  NTE Electronics, Inc. Height 0.21" (5.33mm)  Bipolar Transistors Height 0.21" (5.33mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  NTE Electronics, Inc. Length 0.204" (5.2mm)  Bipolar Transistors Length 0.204" (5.2mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.204" (5.2mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-92  NTE Electronics, Inc. Package Type TO-92  Bipolar Transistors Package Type TO-92  NTE Electronics, 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Electronics, Inc. Bipolar Transistors Temperature, Junction, Operating -55 to +150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 357 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 357 °C⁄W  Bipolar Transistors Thermal Resistance, Junction to Ambient 357 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Thermal Resistance, Junction to Ambient 357 °C⁄W   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Audio Amplifier, Power  NTE Electronics, Inc. Type Audio Amplifier, Power  Bipolar Transistors Type Audio Amplifier, Power  NTE Electronics, Inc. Bipolar Transistors Type Audio Amplifier, Power   Voltage, Breakdown, Collector to Emitter 180 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 180 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 180 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 180 V   Voltage, Collector to Base 180 V  NTE Electronics, Inc. Voltage, Collector to Base 180 V  Bipolar Transistors Voltage, Collector to Base 180 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 180 V   Voltage, Collector to Emitter 160 V  NTE Electronics, Inc. Voltage, Collector to Emitter 160 V  Bipolar Transistors Voltage, Collector to Emitter 160 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 160 V   Voltage, Collector to Emitter, Saturation 0.2 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.2 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.2 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 1 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1 V   Width 0.165" (4.2mm)  NTE Electronics, Inc. Width 0.165" (4.2mm)  Bipolar Transistors Width 0.165" (4.2mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.165" (4.2mm)  
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