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NTE199 - 

TRANSISTOR NPN SILICON 70V IC-0.1A LO NOISE HI-GAIN PRE-AMP

NTE Electronics, Inc. NTE199
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE199
仓库库存编号：
70214932
技术数据表：
View NTE199 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE199产品概述

Silicon NPN Transistor Low Noises

NTE199产品信息

  Brand/Series  Transistor Series  
  Complement to  PNP  
  Configuration  Common Base  
  Current, Collector  100 mA  
  Current, Continuous Collector  100 mA  
  Current, Gain  400  
  Device Dissipation  0.36 W  
  Dimensions  5.2 x 4.2 x 5.33 mm  
  Frequency, Operating  90 MHz  
  Height  0.21" (5.33mm)  
  Length  0.204" (5.2mm)  
  Material  Si  
  Material Type  Silicon  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarity  NPN  
  Power Dissipation  260 mW  
  Primary Type  Si  
  Temperature Range, Junction, Operating  -55 to 125 °C  
  Temperature, Operating, Maximum  +125 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +125 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Amplifier, High Gain  
  Voltage, Breakdown, Collector to Emitter  50 V  
  Voltage, Collector to Base  70 V  
  Voltage, Collector to Emitter  50 V  
  Voltage, Collector to Emitter, Saturation  0.125 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Saturation, Base to Emitter  0.78 V  
  Width  0.165" (4.2mm)  
关键词         

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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Complement to PNP  NTE Electronics, Inc. Complement to PNP  Bipolar Transistors Complement to PNP  NTE Electronics, Inc. Bipolar Transistors Complement to PNP   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 100 mA  NTE Electronics, Inc. Current, Collector 100 mA  Bipolar Transistors Current, Collector 100 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 100 mA   Current, Continuous Collector 100 mA  NTE Electronics, Inc. Current, Continuous Collector 100 mA  Bipolar Transistors Current, Continuous Collector 100 mA  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 100 mA   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Inc. Length 0.204" (5.2mm)  Bipolar Transistors Length 0.204" (5.2mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.204" (5.2mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Material Type Silicon  NTE Electronics, Inc. Material Type Silicon  Bipolar Transistors Material Type Silicon  NTE Electronics, Inc. Bipolar Transistors Material Type Silicon   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-92  NTE Electronics, Inc. Package Type TO-92  Bipolar Transistors Package Type TO-92  NTE Electronics, Inc. Bipolar Transistors Package Type TO-92   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 260 mW  NTE Electronics, Inc. Power Dissipation 260 mW  Bipolar Transistors Power Dissipation 260 mW  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 260 mW   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature Range, Junction, Operating -55 to 125 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -55 to 125 °C  Bipolar Transistors Temperature Range, Junction, Operating -55 to 125 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -55 to 125 °C   Temperature, Operating, Maximum +125 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +125 °C  Bipolar Transistors Temperature, Operating, Maximum +125 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +125 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +125 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +125 °C  Bipolar Transistors Temperature, Operating, Range -55 to +125 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +125 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, High Gain  NTE Electronics, Inc. Type Amplifier, High Gain  Bipolar Transistors Type Amplifier, High Gain  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, High Gain   Voltage, Breakdown, Collector to Emitter 50 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 50 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 50 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 50 V   Voltage, Collector to Base 70 V  NTE Electronics, Inc. Voltage, Collector to Base 70 V  Bipolar Transistors Voltage, Collector to Base 70 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 70 V   Voltage, Collector to Emitter 50 V  NTE Electronics, Inc. Voltage, Collector to Emitter 50 V  Bipolar Transistors Voltage, Collector to Emitter 50 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 50 V   Voltage, Collector to Emitter, Saturation 0.125 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.125 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.125 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.125 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Base to Emitter 0.78 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 0.78 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 0.78 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 0.78 V   Width 0.165" (4.2mm)  NTE Electronics, Inc. Width 0.165" (4.2mm)  Bipolar Transistors Width 0.165" (4.2mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.165" (4.2mm)  
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