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NTE2376 - 

POWER MOSFET N-CHANNEL 200V ID=30A TO-247 CASE HIGH SPEED SWITCH ENHANCEMENT MOD

NTE Electronics, Inc. NTE2376
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2376
仓库库存编号：
70214636
技术数据表：
View NTE2376 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2376产品概述

N-Channel Enhancement Mode MOSFET, 30 A, 190 W, -55 to +150°C, M3 Screw Mounting
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Isolated central Mounting hole
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

    • NTE2376产品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  2800 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  30 A  
      Dimensions  15.9 x 5 x 20 mm  
      Fall Time  62 ns (Typ.)  
      Gate Charge, Total  140 nC  
      Height  0.787" (20mm)  
      Length  0.625" <5/8> (15.875mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +150 °C  
      Package Type  TO-247  
      Polarization  N-Channel  
      Power Dissipation  190 W  
      Resistance, Drain to Source On  0.85 Ω  
      Resistance, Thermal, Junction to Case  0.65 °C⁄W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  40 °C⁄W  
      Time, Turn-Off Delay  70 ns  
      Time, Turn-On Delay  16 ns  
      Transconductance, Forward  12 sec  
      Typical Gate Charge @ Vgs  Maximum of 140 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  200 V  
      Voltage, Drain to Source  200 V  
      Voltage, Forward, Diode  2 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.197" (5mm)  
    关键词         

    NTE2376相关搜索

    Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 2800 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 2800 pF @ 25 V  MOSFET Transistors Capacitance, Input 2800 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 2800 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 30 A  NTE Electronics, Inc. Current, Drain 30 A  MOSFET Transistors Current, Drain 30 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 30 A   Dimensions 15.9 x 5 x 20 mm  NTE Electronics, Inc. Dimensions 15.9 x 5 x 20 mm  MOSFET Transistors Dimensions 15.9 x 5 x 20 mm  NTE Electronics, Inc. MOSFET Transistors Dimensions 15.9 x 5 x 20 mm   Fall Time 62 ns (Typ.)  NTE Electronics, Inc. Fall Time 62 ns (Typ.)  MOSFET Transistors Fall Time 62 ns (Typ.)  NTE Electronics, Inc. MOSFET Transistors Fall Time 62 ns (Typ.)   Gate Charge, Total 140 nC  NTE Electronics, Inc. Gate Charge, Total 140 nC  MOSFET Transistors Gate Charge, Total 140 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 140 nC   Height 0.787" (20mm)  NTE Electronics, Inc. Height 0.787" (20mm)  MOSFET Transistors Height 0.787" (20mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.787" (20mm)   Length 0.625" <5/8> (15.875mm)  NTE Electronics, Inc. Length 0.625" <5/8> (15.875mm)  MOSFET Transistors Length 0.625" <5/8> (15.875mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.625" <5/8> (15.875mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-247  NTE Electronics, Inc. Package Type TO-247  MOSFET Transistors Package Type TO-247  NTE Electronics, Inc. MOSFET Transistors Package Type TO-247   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 190 W  NTE Electronics, Inc. Power Dissipation 190 W  MOSFET Transistors Power Dissipation 190 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 190 W   Resistance, Drain to Source On 0.85 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.85 Ω  MOSFET Transistors Resistance, Drain to Source On 0.85 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.85 Ω   Resistance, Thermal, Junction to Case 0.65 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.65 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.65 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 0.65 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 40 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 40 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C⁄W   Time, Turn-Off Delay 70 ns  NTE Electronics, Inc. Time, Turn-Off Delay 70 ns  MOSFET Transistors Time, Turn-Off Delay 70 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 70 ns   Time, Turn-On Delay 16 ns  NTE Electronics, Inc. Time, Turn-On Delay 16 ns  MOSFET Transistors Time, Turn-On Delay 16 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 16 ns   Transconductance, Forward 12 sec  NTE Electronics, Inc. Transconductance, Forward 12 sec  MOSFET Transistors Transconductance, Forward 12 sec  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 12 sec   Typical Gate Charge @ Vgs Maximum of 140 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 140 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 140 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 140 nC @ 10 V   Voltage, Breakdown, Drain to Source 200 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 200 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 200 V   Voltage, Drain to Source 200 V  NTE Electronics, Inc. Voltage, Drain to Source 200 V  MOSFET Transistors Voltage, Drain to Source 200 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 200 V   Voltage, Forward, Diode 2 V  NTE Electronics, Inc. Voltage, Forward, Diode 2 V  MOSFET Transistors Voltage, Forward, Diode 2 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 2 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.197" (5mm)  NTE Electronics, Inc. Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  NTE Electronics, Inc. MOSFET Transistors Width 0.197" (5mm)  
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