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NTE2395 - 

POWER MOSFET N-CHANNEL 60V ID=50A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE

NTE Electronics, Inc. NTE2395
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2395
仓库库存编号：
70215908
技术数据表：
View NTE2395 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2395产品概述

Enhancement Mode MOSFET, N-Channel, 0.028 Ohm (Max.)
  • Dynamic dv/dt rating
  • +175°C operating temperature
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

    • NTE2395产品信息

      Brand/Series  MOSFET Series  
      Capacitance, Input  1900 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  50 A  
      Fall Time  92 ns (Typ.)  
      Gate Charge, Total  67 nC  
      Height  0.61" (15.49mm)  
      Length  0.42" (10.67mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +175 °C  
      Package Type  TO-220  
      Polarization  N-Channel  
      Power Dissipation  150 W  
      Resistance, Drain to Source On  0.028 Ω  
      Resistance, Thermal, Junction to Case  1 °C⁄W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Thermal Resistance, Junction to Ambient  62 °C⁄W  
      Time, Turn-Off Delay  45 ns  
      Time, Turn-On Delay  14 ns  
      Transconductance, Forward  15 S  
      Typical Gate Charge @ Vgs  Maximum of 67 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  60 V  
      Voltage, Drain to Source  60 V  
      Voltage, Forward, Diode  2.5 V  
      Voltage, Gate to Source  ±20 V  
    关键词         

    NTE2395相关搜索

    Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1900 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 1900 pF @ 25 V  MOSFET Transistors Capacitance, Input 1900 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1900 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 50 A  NTE Electronics, Inc. Current, Drain 50 A  MOSFET Transistors Current, Drain 50 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 50 A   Fall Time 92 ns (Typ.)  NTE Electronics, Inc. Fall Time 92 ns (Typ.)  MOSFET Transistors Fall Time 92 ns (Typ.)  NTE Electronics, Inc. MOSFET Transistors Fall Time 92 ns (Typ.)   Gate Charge, Total 67 nC  NTE Electronics, Inc. Gate Charge, Total 67 nC  MOSFET Transistors Gate Charge, Total 67 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 67 nC   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +175 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +175 °C  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +175 °C   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 150 W  NTE Electronics, Inc. Power Dissipation 150 W  MOSFET Transistors Power Dissipation 150 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 150 W   Resistance, Drain to Source On 0.028 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.028 Ω  MOSFET Transistors Resistance, Drain to Source On 0.028 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.028 Ω   Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C⁄W   Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 62 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 62 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W   Time, Turn-Off Delay 45 ns  NTE Electronics, Inc. Time, Turn-Off Delay 45 ns  MOSFET Transistors Time, Turn-Off Delay 45 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 45 ns   Time, Turn-On Delay 14 ns  NTE Electronics, Inc. Time, Turn-On Delay 14 ns  MOSFET Transistors Time, Turn-On Delay 14 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 14 ns   Transconductance, Forward 15 S  NTE Electronics, Inc. Transconductance, Forward 15 S  MOSFET Transistors Transconductance, Forward 15 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 15 S   Typical Gate Charge @ Vgs Maximum of 67 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 67 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 67 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 67 nC @ 10 V   Voltage, Breakdown, Drain to Source 60 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  NTE Electronics, Inc. Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 2.5 V  NTE Electronics, Inc. Voltage, Forward, Diode 2.5 V  MOSFET Transistors Voltage, Forward, Diode 2.5 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 2.5 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V  
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