amphenol代理商
专业销售Amphenol（安费诺）全系列产品-英国2号仓库
库存查询
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索：    
热门搜索词:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

NTE323 - 

TRANSISTOR PNP SILICON 120V IC=1.5A TO-39 CASE GENERAL PURPOSE SWITCH COMP'L TO

NTE Electronics, Inc. NTE323
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE323
仓库库存编号：
70215978
技术数据表：
View NTE323 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE323产品概述

Silicon Complementary Transistor, PNP Transistor Type, 120 V Collector to Emitter Voltage
  • +200 °C maximum operating temperature
    Complementary silicon epitaxial planer transistors designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.

    • NTE323产品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  1 A  
      Current, Gain  5  
      Diameter  9.39 mm  
      Dimensions  9.39 Dia. x 6.6 H mm  
      Frequency, Operating  30 MHz  
      Gain, DC Current, Maximum  150 @ VCE ≥ 2 V, IC ≥ 250 mA  
      Gain, DC Current, Minimum  40 @ VCE ≥ 2 V, IC ≥ 250 mA  
      Height  0.26" (6.6mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-39  
      Polarity  PNP  
      Power Dissipation  10 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  17.4 °C/W  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Range  Maximum of +200 °C  
      Transistor Type  PNP  
      Type  Driver, Power  
      Voltage, Breakdown, Collector to Emitter  120 V  
      Voltage, Collector to Base  120 V  
      Voltage, Collector to Emitter  120 V  
      Voltage, Collector to Emitter, Saturation  2 V  
      Voltage, Emitter to Base  4 V  
      Voltage, Saturation, Collector to Emitter  0.6 V (Max.) @ IC ≥ 250 mA, IB ≥ 25 mA  
    关键词         

    NTE323相关搜索

    Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 1 A  NTE Electronics, Inc. Current, Collector 1 A  Bipolar Transistors Current, Collector 1 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 1 A   Current, Gain 5  NTE Electronics, Inc. Current, Gain 5  Bipolar Transistors Current, Gain 5  NTE Electronics, Inc. Bipolar Transistors Current, Gain 5   Diameter 9.39 mm  NTE Electronics, Inc. Diameter 9.39 mm  Bipolar Transistors Diameter 9.39 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 9.39 mm   Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Dimensions 9.39 Dia. x 6.6 H mm  Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm   Frequency, Operating 30 MHz  NTE Electronics, Inc. Frequency, Operating 30 MHz  Bipolar Transistors Frequency, Operating 30 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 30 MHz   Gain, DC Current, Maximum 150 @ VCE ≥ 2 V, IC ≥ 250 mA  NTE Electronics, Inc. Gain, DC Current, Maximum 150 @ VCE ≥ 2 V, IC ≥ 250 mA  Bipolar Transistors Gain, DC Current, Maximum 150 @ VCE ≥ 2 V, IC ≥ 250 mA  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 150 @ VCE ≥ 2 V, IC ≥ 250 mA   Gain, DC Current, Minimum 40 @ VCE ≥ 2 V, IC ≥ 250 mA  NTE Electronics, Inc. Gain, DC Current, Minimum 40 @ VCE ≥ 2 V, IC ≥ 250 mA  Bipolar Transistors Gain, DC Current, Minimum 40 @ VCE ≥ 2 V, IC ≥ 250 mA  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 40 @ VCE ≥ 2 V, IC ≥ 250 mA   Height 0.26" (6.6mm)  NTE Electronics, Inc. Height 0.26" (6.6mm)  Bipolar Transistors Height 0.26" (6.6mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.26" (6.6mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-39  NTE Electronics, Inc. Package Type TO-39  Bipolar Transistors Package Type TO-39  NTE Electronics, Inc. Bipolar Transistors Package Type TO-39   Polarity PNP  NTE Electronics, Inc. Polarity PNP  Bipolar Transistors Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Polarity PNP   Power Dissipation 10 W  NTE Electronics, Inc. Power Dissipation 10 W  Bipolar Transistors Power Dissipation 10 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 10 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 17.4 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 17.4 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 17.4 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 17.4 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Range Maximum of +200 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +200 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type Driver, Power  NTE Electronics, Inc. Type Driver, Power  Bipolar Transistors Type Driver, Power  NTE Electronics, Inc. Bipolar Transistors Type Driver, Power   Voltage, Breakdown, Collector to Emitter 120 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 120 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 120 V   Voltage, Collector to Base 120 V  NTE Electronics, Inc. Voltage, Collector to Base 120 V  Bipolar Transistors Voltage, Collector to Base 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 120 V   Voltage, Collector to Emitter 120 V  NTE Electronics, Inc. Voltage, Collector to Emitter 120 V  Bipolar Transistors Voltage, Collector to Emitter 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 120 V   Voltage, Collector to Emitter, Saturation 2 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 2 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 2 V   Voltage, Emitter to Base 4 V  NTE Electronics, Inc. Voltage, Emitter to Base 4 V  Bipolar Transistors Voltage, Emitter to Base 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 4 V   Voltage, Saturation, Collector to Emitter 0.6 V (Max.) @ IC ≥ 250 mA, IB ≥ 25 mA  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.6 V (Max.) @ IC ≥ 250 mA, IB ≥ 25 mA  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.6 V (Max.) @ IC ≥ 250 mA, IB ≥ 25 mA  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.6 V (Max.) @ IC ≥ 250 mA, IB ≥ 25 mA  
    电话:400-900-3095
    QQ:800152669
    关于我们 | Amphenol简介 | Amphenol产品 | Amphenol产品应用 | Amphenol动态 | 按系列选型 | 按产品规格选型 | Amphenol选型手册 | 付款方式 | 联系我们
    Copyright © 2017 www.amphenol-connect.com All Rights Reserved. 技术支持：电子元器件 ICP备案证书号:粤ICP备11103613号