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NTE99 - 

T-NPN SI-PWR DARL HV AMP

NTE Electronics, Inc. NTE99
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTE99
仓库库存编号:
70214724
技术数据表:
View NTE99 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

NTE99产品信息

  Configuration  Common Base  
  Current, Collector  50 A  
  Current, Gain  10  
  Current, Output  50 A  
  Diameter  22.2 mm  
  Dimensions  22.2 Dia. x 8.89 H mm  
  Height  0.35" (8.89mm)  
  Input Voltage  8 V  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  2  
  Number of Pins  3  
  Package Type  TO-3  
  Polarity  NPN  
  Power Dissipation  250 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Ambient  0.7 °C/W  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +200 °C  
  Transistor Type  NPN  
  Type  High Voltage, Power  
  Voltage, Collector to Emitter  400 V  
  Voltage, Collector to Emitter, Saturation  5 V  
  Voltage, Emitter to Base  8 V  
  Voltage, Output  400 V  
  Voltage, Saturation, Base to Emitter  2.75 V  
关键词         

NTE99相关搜索

Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 50 A  NTE Electronics, Inc. Current, Collector 50 A  Bipolar Transistors Current, Collector 50 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 50 A   Current, Gain 10  NTE Electronics, Inc. Current, Gain 10  Bipolar Transistors Current, Gain 10  NTE Electronics, Inc. Bipolar Transistors Current, Gain 10   Current, Output 50 A  NTE Electronics, Inc. Current, Output 50 A  Bipolar Transistors Current, Output 50 A  NTE Electronics, Inc. Bipolar Transistors Current, Output 50 A   Diameter 22.2 mm  NTE Electronics, Inc. Diameter 22.2 mm  Bipolar Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Input Voltage 8 V  NTE Electronics, Inc. Input Voltage 8 V  Bipolar Transistors Input Voltage 8 V  NTE Electronics, Inc. Bipolar Transistors Input Voltage 8 V   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 2  NTE Electronics, Inc. Number of Elements per Chip 2  Bipolar Transistors Number of Elements per Chip 2  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 2   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 250 W  NTE Electronics, Inc. Power Dissipation 250 W  Bipolar Transistors Power Dissipation 250 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 250 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Ambient 0.7 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Ambient 0.7 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Ambient 0.7 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Ambient 0.7 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Voltage, Power  NTE Electronics, Inc. Type High Voltage, Power  Bipolar Transistors Type High Voltage, Power  NTE Electronics, Inc. Bipolar Transistors Type High Voltage, Power   Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Collector to Emitter 400 V  Bipolar Transistors Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 400 V   Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V   Voltage, Emitter to Base 8 V  NTE Electronics, Inc. Voltage, Emitter to Base 8 V  Bipolar Transistors Voltage, Emitter to Base 8 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 8 V   Voltage, Output 400 V  NTE Electronics, Inc. Voltage, Output 400 V  Bipolar Transistors Voltage, Output 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Output 400 V   Voltage, Saturation, Base to Emitter 2.75 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 2.75 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 2.75 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 2.75 V  
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