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MPSA44G - 

SS T092 GP XSTR NPN 400V -LEAD FREE

ON Semiconductor MPSA44G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
MPSA44G
仓库库存编号:
70100044
技术数据表:
View MPSA44G Datasheet Datasheet
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MPSA44G产品信息

  Configuration  Common Base  
  Current, Collector  300 mA  
  Current, Gain  40  
  Dimensions  5.20 x 4.19 x 5.33 mm  
  Height  0.21" (5.33mm)  
  Length  0.204" (5.2mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-92  
  Polarity  NPN  
  Power Dissipation  625 mW  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  83.3 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Transistor Type  NPN  
  Type  High Voltage  
  Voltage, Breakdown, Collector to Emitter  400 V  
  Voltage, Collector to Base  500 V  
  Voltage, Collector to Emitter  400 V  
  Voltage, Collector to Emitter, Saturation  0.75 V  
  Voltage, Emitter to Base  6 V  
  Voltage, Saturation, Base to Emitter  0.75 V  
  Width  0.165" (4.19mm)  
关键词         

MPSA44G相关搜索

Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 300 mA  ON Semiconductor Current, Collector 300 mA  Bipolar Transistors Current, Collector 300 mA  ON Semiconductor Bipolar Transistors Current, Collector 300 mA   Current, Gain 40  ON Semiconductor Current, Gain 40  Bipolar Transistors Current, Gain 40  ON Semiconductor Bipolar Transistors Current, Gain 40   Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Dimensions 5.20 x 4.19 x 5.33 mm  Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm  ON Semiconductor Bipolar Transistors Dimensions 5.20 x 4.19 x 5.33 mm   Height 0.21" (5.33mm)  ON Semiconductor Height 0.21" (5.33mm)  Bipolar Transistors Height 0.21" (5.33mm)  ON Semiconductor Bipolar Transistors Height 0.21" (5.33mm)   Length 0.204" (5.2mm)  ON Semiconductor Length 0.204" (5.2mm)  Bipolar Transistors Length 0.204" (5.2mm)  ON Semiconductor Bipolar Transistors Length 0.204" (5.2mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-92  ON Semiconductor Package Type TO-92  Bipolar Transistors Package Type TO-92  ON Semiconductor Bipolar Transistors Package Type TO-92   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 625 mW  ON Semiconductor Power Dissipation 625 mW  Bipolar Transistors Power Dissipation 625 mW  ON Semiconductor Bipolar Transistors Power Dissipation 625 mW   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 83.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type High Voltage  ON Semiconductor Type High Voltage  Bipolar Transistors Type High Voltage  ON Semiconductor Bipolar Transistors Type High Voltage   Voltage, Breakdown, Collector to Emitter 400 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 400 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V   Voltage, Collector to Base 500 V  ON Semiconductor Voltage, Collector to Base 500 V  Bipolar Transistors Voltage, Collector to Base 500 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 500 V   Voltage, Collector to Emitter 400 V  ON Semiconductor Voltage, Collector to Emitter 400 V  Bipolar Transistors Voltage, Collector to Emitter 400 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 400 V   Voltage, Collector to Emitter, Saturation 0.75 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.75 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.75 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.75 V   Voltage, Emitter to Base 6 V  ON Semiconductor Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 0.75 V  ON Semiconductor Voltage, Saturation, Base to Emitter 0.75 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 0.75 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 0.75 V   Width 0.165" (4.19mm)  ON Semiconductor Width 0.165" (4.19mm)  Bipolar Transistors Width 0.165" (4.19mm)  ON Semiconductor Bipolar Transistors Width 0.165" (4.19mm)  
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