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NTD20N06LT4G - 

NTD20N06LT4G N-channel MOSFET Transistor, 20 A, 60 V, 3-Pin DPAK

ON Semiconductor NTD20N06LT4G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTD20N06LT4G
仓库库存编号:
70275457
技术数据表:
View NTD20N06LT4G Datasheet Datasheet
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NTD20N06LT4G产品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  7.7 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  20 A  
  Dimensions  6.73 x 6.22 x 2.25 mm  
  Height  0.089" (2.25mm)  
  Length  0.264" (6.73mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  DPAK  
  Power Dissipation  60 W  
  Resistance, Drain to Source On  48 mΩ  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +175 °C  
  Time, Turn-Off Delay  25 ns  
  Time, Turn-On Delay  9.6 ns  
  Transconductance, Forward  17.5 sec  
  Typical Gate Charge @ Vgs  16.6 nC @ 5 V  
  Voltage, Drain to Source  60 V  
  Voltage, Forward, Diode  1.2 V  
  Voltage, Gate to Source  ±15 V  
  Width  0.245" (6.22mm)  
关键词         

NTD20N06LT4G相关搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 7.7 pF @ 25 V  ON Semiconductor Capacitance, Input 7.7 pF @ 25 V  MOSFET Transistors Capacitance, Input 7.7 pF @ 25 V  ON Semiconductor MOSFET Transistors Capacitance, Input 7.7 pF @ 25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 20 A  ON Semiconductor Current, Drain 20 A  MOSFET Transistors Current, Drain 20 A  ON Semiconductor MOSFET Transistors Current, Drain 20 A   Dimensions 6.73 x 6.22 x 2.25 mm  ON Semiconductor Dimensions 6.73 x 6.22 x 2.25 mm  MOSFET Transistors Dimensions 6.73 x 6.22 x 2.25 mm  ON Semiconductor MOSFET Transistors Dimensions 6.73 x 6.22 x 2.25 mm   Height 0.089" (2.25mm)  ON Semiconductor Height 0.089" (2.25mm)  MOSFET Transistors Height 0.089" (2.25mm)  ON Semiconductor MOSFET Transistors Height 0.089" (2.25mm)   Length 0.264" (6.73mm)  ON Semiconductor Length 0.264" (6.73mm)  MOSFET Transistors Length 0.264" (6.73mm)  ON Semiconductor MOSFET Transistors Length 0.264" (6.73mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type DPAK  ON Semiconductor Package Type DPAK  MOSFET Transistors Package Type DPAK  ON Semiconductor MOSFET Transistors Package Type DPAK   Power Dissipation 60 W  ON Semiconductor Power Dissipation 60 W  MOSFET Transistors Power Dissipation 60 W  ON Semiconductor MOSFET Transistors Power Dissipation 60 W   Resistance, Drain to Source On 48 mΩ  ON Semiconductor Resistance, Drain to Source On 48 mΩ  MOSFET Transistors Resistance, Drain to Source On 48 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 48 mΩ   Temperature, Operating, Maximum +175 °C  ON Semiconductor Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  ON Semiconductor Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 25 ns  ON Semiconductor Time, Turn-Off Delay 25 ns  MOSFET Transistors Time, Turn-Off Delay 25 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 25 ns   Time, Turn-On Delay 9.6 ns  ON Semiconductor Time, Turn-On Delay 9.6 ns  MOSFET Transistors Time, Turn-On Delay 9.6 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 9.6 ns   Transconductance, Forward 17.5 sec  ON Semiconductor Transconductance, Forward 17.5 sec  MOSFET Transistors Transconductance, Forward 17.5 sec  ON Semiconductor MOSFET Transistors Transconductance, Forward 17.5 sec   Typical Gate Charge @ Vgs 16.6 nC @ 5 V  ON Semiconductor Typical Gate Charge @ Vgs 16.6 nC @ 5 V  MOSFET Transistors Typical Gate Charge @ Vgs 16.6 nC @ 5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 16.6 nC @ 5 V   Voltage, Drain to Source 60 V  ON Semiconductor Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 1.2 V  ON Semiconductor Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±15 V  ON Semiconductor Voltage, Gate to Source ±15 V  MOSFET Transistors Voltage, Gate to Source ±15 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±15 V   Width 0.245" (6.22mm)  ON Semiconductor Width 0.245" (6.22mm)  MOSFET Transistors Width 0.245" (6.22mm)  ON Semiconductor MOSFET Transistors Width 0.245" (6.22mm)  
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