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NTF3055-100T1G - 

MOSFET, Power; N-Ch; VDSS 68VDC; RDS(ON) 88 Milliohms; ID 3A; SOT-223 (TO-261); -55deg

ON Semiconductor NTF3055-100T1G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTF3055-100T1G
仓库库存编号：
70100696
技术数据表：
View NTF3055-100T1G Datasheet Datasheet
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NTF3055-100T1G产品信息

  Brand/Series  NT MOSFET Series  
  Current, Drain  3 A  
  Gate Charge, Total  10.6 nC  
  Package Type  SOT-223 (TO-261)  
  Polarization  N-Channel  
  Power Dissipation  2.1 mW  
  Resistance, Drain to Source On  88 Milliohms  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -55 °C  
  Time, Turn-Off Delay  21 ns  
  Time, Turn-On Delay  9.4 ns  
  Transconductance, Forward  3.2 Mhos  
  Voltage, Breakdown, Drain to Source  68 V  
  Voltage, Forward, Diode  0.89 V  
  Voltage, Gate to Source  ±20 V  
关键词         

NTF3055-100T1G相关搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Current, Drain 3 A  ON Semiconductor Current, Drain 3 A  MOSFET Transistors Current, Drain 3 A  ON Semiconductor MOSFET Transistors Current, Drain 3 A   Gate Charge, Total 10.6 nC  ON Semiconductor Gate Charge, Total 10.6 nC  MOSFET Transistors Gate Charge, Total 10.6 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 10.6 nC   Package Type SOT-223 (TO-261)  ON Semiconductor Package Type SOT-223 (TO-261)  MOSFET Transistors Package Type SOT-223 (TO-261)  ON Semiconductor MOSFET Transistors Package Type SOT-223 (TO-261)   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 2.1 mW  ON Semiconductor Power Dissipation 2.1 mW  MOSFET Transistors Power Dissipation 2.1 mW  ON Semiconductor MOSFET Transistors Power Dissipation 2.1 mW   Resistance, Drain to Source On 88 Milliohms  ON Semiconductor Resistance, Drain to Source On 88 Milliohms  MOSFET Transistors Resistance, Drain to Source On 88 Milliohms  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 88 Milliohms   Temperature, Operating, Maximum +175 °C  ON Semiconductor Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Time, Turn-Off Delay 21 ns  ON Semiconductor Time, Turn-Off Delay 21 ns  MOSFET Transistors Time, Turn-Off Delay 21 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 21 ns   Time, Turn-On Delay 9.4 ns  ON Semiconductor Time, Turn-On Delay 9.4 ns  MOSFET Transistors Time, Turn-On Delay 9.4 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 9.4 ns   Transconductance, Forward 3.2 Mhos  ON Semiconductor Transconductance, Forward 3.2 Mhos  MOSFET Transistors Transconductance, Forward 3.2 Mhos  ON Semiconductor MOSFET Transistors Transconductance, Forward 3.2 Mhos   Voltage, Breakdown, Drain to Source 68 V  ON Semiconductor Voltage, Breakdown, Drain to Source 68 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 68 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 68 V   Voltage, Forward, Diode 0.89 V  ON Semiconductor Voltage, Forward, Diode 0.89 V  MOSFET Transistors Voltage, Forward, Diode 0.89 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.89 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V  
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