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NTGS3446T1G - 

MOSFET, Power; N-Ch; VDSS 20VDC; RDS(ON) 36 Milliohms; ID 2.5A; TSOP-6; PD 1W; VGS +/-1

ON Semiconductor NTGS3446T1G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTGS3446T1G
仓库库存编号:
70100699
技术数据表:
View NTGS3446T1G Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

NTGS3446T1G产品概述

N-Channel Power MOSFET, 20V, ON Semiconductor

NTGS3446T1G产品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  510 pF @ 10 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Quad Drain  
  Current, Drain  2.5 A  
  Dimensions  3.1 x 1.7 x 1 mm  
  Gate Charge, Total  8 nC  
  Height  0.039" (1mm)  
  Length  0.122" (3.1mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  6  
  Package Type  TSOP  
  Polarization  N-Channel  
  Power Dissipation  2 W  
  Resistance, Drain to Source On  55 mΩ  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  35 ns  
  Time, Turn-On Delay  9 ns  
  Transconductance, Forward  12 S  
  Typical Gate Charge @ Vgs  8 nC @ 4.5 V  
  Voltage, Breakdown, Drain to Source  20 V  
  Voltage, Drain to Source  20 V  
  Voltage, Forward, Diode  0.74 V  
  Voltage, Gate to Source  ±12 V  
  Width  0.067" (1.7mm)  
关键词         

NTGS3446T1G相关搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 510 pF @ 10 V  ON Semiconductor Capacitance, Input 510 pF @ 10 V  MOSFET Transistors Capacitance, Input 510 pF @ 10 V  ON Semiconductor MOSFET Transistors Capacitance, Input 510 pF @ 10 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Quad Drain  ON Semiconductor Configuration Quad Drain  MOSFET Transistors Configuration Quad Drain  ON Semiconductor MOSFET Transistors Configuration Quad Drain   Current, Drain 2.5 A  ON Semiconductor Current, Drain 2.5 A  MOSFET Transistors Current, Drain 2.5 A  ON Semiconductor MOSFET Transistors Current, Drain 2.5 A   Dimensions 3.1 x 1.7 x 1 mm  ON Semiconductor Dimensions 3.1 x 1.7 x 1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm  ON Semiconductor MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm   Gate Charge, Total 8 nC  ON Semiconductor Gate Charge, Total 8 nC  MOSFET Transistors Gate Charge, Total 8 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 8 nC   Height 0.039" (1mm)  ON Semiconductor Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  ON Semiconductor MOSFET Transistors Height 0.039" (1mm)   Length 0.122" (3.1mm)  ON Semiconductor Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  ON Semiconductor MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 6  ON Semiconductor Number of Pins 6  MOSFET Transistors Number of Pins 6  ON Semiconductor MOSFET Transistors Number of Pins 6   Package Type TSOP  ON Semiconductor Package Type TSOP  MOSFET Transistors Package Type TSOP  ON Semiconductor MOSFET Transistors Package Type TSOP   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 2 W  ON Semiconductor Power Dissipation 2 W  MOSFET Transistors Power Dissipation 2 W  ON Semiconductor MOSFET Transistors Power Dissipation 2 W   Resistance, Drain to Source On 55 mΩ  ON Semiconductor Resistance, Drain to Source On 55 mΩ  MOSFET Transistors Resistance, Drain to Source On 55 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 55 mΩ   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 35 ns  ON Semiconductor Time, Turn-Off Delay 35 ns  MOSFET Transistors Time, Turn-Off Delay 35 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 35 ns   Time, Turn-On Delay 9 ns  ON Semiconductor Time, Turn-On Delay 9 ns  MOSFET Transistors Time, Turn-On Delay 9 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 9 ns   Transconductance, Forward 12 S  ON Semiconductor Transconductance, Forward 12 S  MOSFET Transistors Transconductance, Forward 12 S  ON Semiconductor MOSFET Transistors Transconductance, Forward 12 S   Typical Gate Charge @ Vgs 8 nC @ 4.5 V  ON Semiconductor Typical Gate Charge @ Vgs 8 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 8 nC @ 4.5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 8 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 20 V  ON Semiconductor Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Drain to Source 20 V  ON Semiconductor Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 0.74 V  ON Semiconductor Voltage, Forward, Diode 0.74 V  MOSFET Transistors Voltage, Forward, Diode 0.74 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.74 V   Voltage, Gate to Source ±12 V  ON Semiconductor Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.067" (1.7mm)  ON Semiconductor Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  ON Semiconductor MOSFET Transistors Width 0.067" (1.7mm)  
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