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NTR4502PT1G - 

NTR4502PT1G P-channel MOSFET Transistor, 1.9 A, 30 V, 3-Pin SOT-23

ON Semiconductor NTR4502PT1G
声明:图片仅供参考,请以实物为准!
制造商产品编号:
NTR4502PT1G
仓库库存编号:
70275462
技术数据表:
View NTR4502PT1G Datasheet Datasheet
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NTR4502PT1G产品信息

  Brand/Series  NT MOSFET Series  
  Capacitance, Input  200 pF @ -15 V  
  Channel Mode  Enhancement  
  Channel Type  P  
  Configuration  Single  
  Current, Drain  -1.56 A  
  Dimensions  3.04 x 1.4 x 1.01 mm  
  Height  0.04" (1.01mm)  
  Length  0.119" (3.04mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SOT-23  
  Power Dissipation  0.4 W  
  Resistance, Drain to Source On  350 mΩ  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  19 ns  
  Time, Turn-On Delay  5.2 ns  
  Transconductance, Forward  3 sec  
  Typical Gate Charge @ Vgs  6 nC @ -10 V  
  Voltage, Drain to Source  -30 V  
  Voltage, Forward, Diode  -1.2 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.055" (1.4mm)  
关键词         

NTR4502PT1G相关搜索

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 200 pF @ -15 V  ON Semiconductor Capacitance, Input 200 pF @ -15 V  MOSFET Transistors Capacitance, Input 200 pF @ -15 V  ON Semiconductor MOSFET Transistors Capacitance, Input 200 pF @ -15 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type P  ON Semiconductor Channel Type P  MOSFET Transistors Channel Type P  ON Semiconductor MOSFET Transistors Channel Type P   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain -1.56 A  ON Semiconductor Current, Drain -1.56 A  MOSFET Transistors Current, Drain -1.56 A  ON Semiconductor MOSFET Transistors Current, Drain -1.56 A   Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor Dimensions 3.04 x 1.4 x 1.01 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor MOSFET Transistors Dimensions 3.04 x 1.4 x 1.01 mm   Height 0.04" (1.01mm)  ON Semiconductor Height 0.04" (1.01mm)  MOSFET Transistors Height 0.04" (1.01mm)  ON Semiconductor MOSFET Transistors Height 0.04" (1.01mm)   Length 0.119" (3.04mm)  ON Semiconductor Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  ON Semiconductor MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type SOT-23  ON Semiconductor Package Type SOT-23  MOSFET Transistors Package Type SOT-23  ON Semiconductor MOSFET Transistors Package Type SOT-23   Power Dissipation 0.4 W  ON Semiconductor Power Dissipation 0.4 W  MOSFET Transistors Power Dissipation 0.4 W  ON Semiconductor MOSFET Transistors Power Dissipation 0.4 W   Resistance, Drain to Source On 350 mΩ  ON Semiconductor Resistance, Drain to Source On 350 mΩ  MOSFET Transistors Resistance, Drain to Source On 350 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 350 mΩ   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 19 ns  ON Semiconductor Time, Turn-Off Delay 19 ns  MOSFET Transistors Time, Turn-Off Delay 19 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 19 ns   Time, Turn-On Delay 5.2 ns  ON Semiconductor Time, Turn-On Delay 5.2 ns  MOSFET Transistors Time, Turn-On Delay 5.2 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 5.2 ns   Transconductance, Forward 3 sec  ON Semiconductor Transconductance, Forward 3 sec  MOSFET Transistors Transconductance, Forward 3 sec  ON Semiconductor MOSFET Transistors Transconductance, Forward 3 sec   Typical Gate Charge @ Vgs 6 nC @ -10 V  ON Semiconductor Typical Gate Charge @ Vgs 6 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 6 nC @ -10 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 6 nC @ -10 V   Voltage, Drain to Source -30 V  ON Semiconductor Voltage, Drain to Source -30 V  MOSFET Transistors Voltage, Drain to Source -30 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source -30 V   Voltage, Forward, Diode -1.2 V  ON Semiconductor Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.055" (1.4mm)  ON Semiconductor Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  ON Semiconductor MOSFET Transistors Width 0.055" (1.4mm)  
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