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SI1022R-T1-E3 - 

60V (D-S) N-CH MOSFET W/ESD PROTECT

Siliconix / Vishay SI1022R-T1-E3
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SI1022R-T1-E3
仓库库存编号:
70026181
技术数据表:
View SI1022R-T1-E3 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SI1022R-T1-E3产品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI1022R-T1-E3产品信息

      Brand/Series  SI10 Series  
      Capacitance, Input  30 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  330 mA  
      Dimensions  1.68 x 0.86 x 0.8 mm  
      Gate Charge, Total  0.6 pC  
      Height  0.031" (0.8mm)  
      Length  0.066" (1.68mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  –55 to +150 °C  
      Package Type  SC-75A  
      Polarization  N-Channel  
      Power Dissipation  250 mW  
      Resistance, Drain to Source On  5 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  35 ns  
      Time, Turn-On Delay  25 ns  
      Transconductance, Forward  0.1 S  
      Typical Gate Charge @ Vgs  Maximum of 0.6 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  60 V  
      Voltage, Drain to Source  60 V  
      Voltage, Forward, Diode  1.3 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.034" (0.86mm)  
    关键词         

    SI1022R-T1-E3相关搜索

    Brand/Series SI10 Series  Siliconix / Vishay Brand/Series SI10 Series  MOSFET Transistors Brand/Series SI10 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI10 Series   Capacitance, Input 30 pF @ 25 V  Siliconix / Vishay Capacitance, Input 30 pF @ 25 V  MOSFET Transistors Capacitance, Input 30 pF @ 25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 30 pF @ 25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 330 mA  Siliconix / Vishay Current, Drain 330 mA  MOSFET Transistors Current, Drain 330 mA  Siliconix / Vishay MOSFET Transistors Current, Drain 330 mA   Dimensions 1.68 x 0.86 x 0.8 mm  Siliconix / Vishay Dimensions 1.68 x 0.86 x 0.8 mm  MOSFET Transistors Dimensions 1.68 x 0.86 x 0.8 mm  Siliconix / Vishay MOSFET Transistors Dimensions 1.68 x 0.86 x 0.8 mm   Gate Charge, Total 0.6 pC  Siliconix / Vishay Gate Charge, Total 0.6 pC  MOSFET Transistors Gate Charge, Total 0.6 pC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 0.6 pC   Height 0.031" (0.8mm)  Siliconix / Vishay Height 0.031" (0.8mm)  MOSFET Transistors Height 0.031" (0.8mm)  Siliconix / Vishay MOSFET Transistors Height 0.031" (0.8mm)   Length 0.066" (1.68mm)  Siliconix / Vishay Length 0.066" (1.68mm)  MOSFET Transistors Length 0.066" (1.68mm)  Siliconix / Vishay MOSFET Transistors Length 0.066" (1.68mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature –55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +150 °C  MOSFET Transistors Operating and Storage Temperature –55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +150 °C   Package Type SC-75A  Siliconix / Vishay Package Type SC-75A  MOSFET Transistors Package Type SC-75A  Siliconix / Vishay MOSFET Transistors Package Type SC-75A   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 250 mW  Siliconix / Vishay Power Dissipation 250 mW  MOSFET Transistors Power Dissipation 250 mW  Siliconix / Vishay MOSFET Transistors Power Dissipation 250 mW   Resistance, Drain to Source On 5 Ω  Siliconix / Vishay Resistance, Drain to Source On 5 Ω  MOSFET Transistors Resistance, Drain to Source On 5 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 5 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 35 ns  Siliconix / Vishay Time, Turn-Off Delay 35 ns  MOSFET Transistors Time, Turn-Off Delay 35 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 35 ns   Time, Turn-On Delay 25 ns  Siliconix / Vishay Time, Turn-On Delay 25 ns  MOSFET Transistors Time, Turn-On Delay 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 25 ns   Transconductance, Forward 0.1 S  Siliconix / Vishay Transconductance, Forward 0.1 S  MOSFET Transistors Transconductance, Forward 0.1 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 0.1 S   Typical Gate Charge @ Vgs Maximum of 0.6 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs Maximum of 0.6 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 0.6 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 0.6 nC @ 10 V   Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  Siliconix / Vishay Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 1.3 V  Siliconix / Vishay Voltage, Forward, Diode 1.3 V  MOSFET Transistors Voltage, Forward, Diode 1.3 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.3 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.034" (0.86mm)  Siliconix / Vishay Width 0.034" (0.86mm)  MOSFET Transistors Width 0.034" (0.86mm)  Siliconix / Vishay MOSFET Transistors Width 0.034" (0.86mm)  
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