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SI2303CDS-T1-E3 - 

N-CH MOSFET SO-8 BWL 12V 5.5MOHM @ 4.5VPMW OPT

Siliconix / Vishay SI2303CDS-T1-E3
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SI2303CDS-T1-E3
仓库库存编号:
70026193
技术数据表:
View SI2303CDS-T1-E3 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SI2303CDS-T1-E3产品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI2303CDS-T1-E3产品信息

      Brand/Series  SI23 Series  
      Capacitance, Input  155 pF @ -15 V  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Single  
      Current, Drain  -1.5 A  
      Dimensions  3.04 x 1.4 x 1.02 mm  
      Height  0.04" (1.02mm)  
      Length  0.119" (3.04mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-236  
      Power Dissipation  2.3 W  
      Resistance, Drain to Source On  0.33 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  12 ns  
      Time, Turn-On Delay  36 ns  
      Transconductance, Forward  2 S  
      Typical Gate Charge @ Vgs  4 nC @ -10 V  
      Voltage, Drain to Source  -30 V  
      Voltage, Forward, Diode  -1.2 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.055" (1.4mm)  
    关键词         

    SI2303CDS-T1-E3相关搜索

    Brand/Series SI23 Series  Siliconix / Vishay Brand/Series SI23 Series  MOSFET Transistors Brand/Series SI23 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI23 Series   Capacitance, Input 155 pF @ -15 V  Siliconix / Vishay Capacitance, Input 155 pF @ -15 V  MOSFET Transistors Capacitance, Input 155 pF @ -15 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 155 pF @ -15 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -1.5 A  Siliconix / Vishay Current, Drain -1.5 A  MOSFET Transistors Current, Drain -1.5 A  Siliconix / Vishay MOSFET Transistors Current, Drain -1.5 A   Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay Dimensions 3.04 x 1.4 x 1.02 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.04 x 1.4 x 1.02 mm   Height 0.04" (1.02mm)  Siliconix / Vishay Height 0.04" (1.02mm)  MOSFET Transistors Height 0.04" (1.02mm)  Siliconix / Vishay MOSFET Transistors Height 0.04" (1.02mm)   Length 0.119" (3.04mm)  Siliconix / Vishay Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  Siliconix / Vishay MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Package Type TO-236  Siliconix / Vishay Package Type TO-236  MOSFET Transistors Package Type TO-236  Siliconix / Vishay MOSFET Transistors Package Type TO-236   Power Dissipation 2.3 W  Siliconix / Vishay Power Dissipation 2.3 W  MOSFET Transistors Power Dissipation 2.3 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 2.3 W   Resistance, Drain to Source On 0.33 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.33 Ω  MOSFET Transistors Resistance, Drain to Source On 0.33 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.33 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 12 ns  Siliconix / Vishay Time, Turn-Off Delay 12 ns  MOSFET Transistors Time, Turn-Off Delay 12 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 12 ns   Time, Turn-On Delay 36 ns  Siliconix / Vishay Time, Turn-On Delay 36 ns  MOSFET Transistors Time, Turn-On Delay 36 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 36 ns   Transconductance, Forward 2 S  Siliconix / Vishay Transconductance, Forward 2 S  MOSFET Transistors Transconductance, Forward 2 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 2 S   Typical Gate Charge @ Vgs 4 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 4 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 4 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 4 nC @ -10 V   Voltage, Drain to Source -30 V  Siliconix / Vishay Voltage, Drain to Source -30 V  MOSFET Transistors Voltage, Drain to Source -30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -30 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.055" (1.4mm)  Siliconix / Vishay Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  Siliconix / Vishay MOSFET Transistors Width 0.055" (1.4mm)  
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