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SI2309DS-T1-E3 - 

MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.275Ohm; ID -1.25A; TO-236 (SOT-23); PD 1.25W

Siliconix / Vishay SI2309DS-T1-E3
声明：图片仅供参考，请以实物为准！
制造商产品编号：
SI2309DS-T1-E3
仓库库存编号：
70026067
技术数据表：
View SI2309DS-T1-E3 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

SI2309DS-T1-E3产品概述

Features:
  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Ultra Low On-Resistance for Increased Battery Life
  • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
  • Compliant to RoHS Directive 2002/95/EC

    Applications:
  • Load/Power Switching in Portable Devices

    • SI2309DS-T1-E3产品信息

      Brand/Series  SI23 Series  
      Current, Drain  -1.25 A  
      Gate Charge, Total  5.4 nC  
      Package Type  TO-236 (SOT-23)  
      Polarization  P-Channel  
      Power Dissipation  1.25 W  
      Resistance, Drain to Source On  0.275 Ohm  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Time, Turn-Off Delay  15.5 ns  
      Time, Turn-On Delay  10.5 ns  
      Transconductance, Forward  1.9 S  
      Voltage, Breakdown, Drain to Source  -60 V  
      Voltage, Forward, Diode  -0.82 V  
      Voltage, Gate to Source  ±20 V  
    关键词         

    SI2309DS-T1-E3相关搜索

    Brand/Series SI23 Series  Siliconix / Vishay Brand/Series SI23 Series  MOSFET Transistors Brand/Series SI23 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI23 Series   Current, Drain -1.25 A  Siliconix / Vishay Current, Drain -1.25 A  MOSFET Transistors Current, Drain -1.25 A  Siliconix / Vishay MOSFET Transistors Current, Drain -1.25 A   Gate Charge, Total 5.4 nC  Siliconix / Vishay Gate Charge, Total 5.4 nC  MOSFET Transistors Gate Charge, Total 5.4 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 5.4 nC   Package Type TO-236 (SOT-23)  Siliconix / Vishay Package Type TO-236 (SOT-23)  MOSFET Transistors Package Type TO-236 (SOT-23)  Siliconix / Vishay MOSFET Transistors Package Type TO-236 (SOT-23)   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.25 W  Siliconix / Vishay Power Dissipation 1.25 W  MOSFET Transistors Power Dissipation 1.25 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.25 W   Resistance, Drain to Source On 0.275 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.275 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.275 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.275 Ohm   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Time, Turn-Off Delay 15.5 ns  Siliconix / Vishay Time, Turn-Off Delay 15.5 ns  MOSFET Transistors Time, Turn-Off Delay 15.5 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 15.5 ns   Time, Turn-On Delay 10.5 ns  Siliconix / Vishay Time, Turn-On Delay 10.5 ns  MOSFET Transistors Time, Turn-On Delay 10.5 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 10.5 ns   Transconductance, Forward 1.9 S  Siliconix / Vishay Transconductance, Forward 1.9 S  MOSFET Transistors Transconductance, Forward 1.9 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 1.9 S   Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Forward, Diode -0.82 V  Siliconix / Vishay Voltage, Forward, Diode -0.82 V  MOSFET Transistors Voltage, Forward, Diode -0.82 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -0.82 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V  
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