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SI3460BDV-T1-E3 - 

N-CHANNEL 20-V (D-S) MOSFET

Siliconix / Vishay SI3460BDV-T1-E3
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SI3460BDV-T1-E3
仓库库存编号:
70026203
技术数据表:
View SI3460BDV-T1-E3 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SI3460BDV-T1-E3产品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SI3460BDV-T1-E3产品信息

      Brand/Series  SI34 Series  
      Capacitance, Input  860 pF @ 10 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Quad Drain  
      Current, Drain  8 A  
      Dimensions  3.1 x 1.7 x 1 mm  
      Height  0.039" (1mm)  
      Length  0.122" (3.1mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  6  
      Package Type  TSOP-6  
      Power Dissipation  3.5 W  
      Resistance, Drain to Source On  0.04 Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  25 ns  
      Time, Turn-On Delay  7 ns  
      Transconductance, Forward  22 S  
      Typical Gate Charge @ Vgs  16 nC @ 8 V  
      Voltage, Drain to Source  20 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±8 V  
      Width  0.067" (1.7mm)  
    关键词         

    SI3460BDV-T1-E3相关搜索

    Brand/Series SI34 Series  Siliconix / Vishay Brand/Series SI34 Series  MOSFET Transistors Brand/Series SI34 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI34 Series   Capacitance, Input 860 pF @ 10 V  Siliconix / Vishay Capacitance, Input 860 pF @ 10 V  MOSFET Transistors Capacitance, Input 860 pF @ 10 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 860 pF @ 10 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Quad Drain  Siliconix / Vishay Configuration Quad Drain  MOSFET Transistors Configuration Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain   Current, Drain 8 A  Siliconix / Vishay Current, Drain 8 A  MOSFET Transistors Current, Drain 8 A  Siliconix / Vishay MOSFET Transistors Current, Drain 8 A   Dimensions 3.1 x 1.7 x 1 mm  Siliconix / Vishay Dimensions 3.1 x 1.7 x 1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm   Height 0.039" (1mm)  Siliconix / Vishay Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  Siliconix / Vishay MOSFET Transistors Height 0.039" (1mm)   Length 0.122" (3.1mm)  Siliconix / Vishay Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 6  Siliconix / Vishay Number of Pins 6  MOSFET Transistors Number of Pins 6  Siliconix / Vishay MOSFET Transistors Number of Pins 6   Package Type TSOP-6  Siliconix / Vishay Package Type TSOP-6  MOSFET Transistors Package Type TSOP-6  Siliconix / Vishay MOSFET Transistors Package Type TSOP-6   Power Dissipation 3.5 W  Siliconix / Vishay Power Dissipation 3.5 W  MOSFET Transistors Power Dissipation 3.5 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 3.5 W   Resistance, Drain to Source On 0.04 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.04 Ω  MOSFET Transistors Resistance, Drain to Source On 0.04 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.04 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 25 ns  Siliconix / Vishay Time, Turn-Off Delay 25 ns  MOSFET Transistors Time, Turn-Off Delay 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 25 ns   Time, Turn-On Delay 7 ns  Siliconix / Vishay Time, Turn-On Delay 7 ns  MOSFET Transistors Time, Turn-On Delay 7 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 7 ns   Transconductance, Forward 22 S  Siliconix / Vishay Transconductance, Forward 22 S  MOSFET Transistors Transconductance, Forward 22 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 22 S   Typical Gate Charge @ Vgs 16 nC @ 8 V  Siliconix / Vishay Typical Gate Charge @ Vgs 16 nC @ 8 V  MOSFET Transistors Typical Gate Charge @ Vgs 16 nC @ 8 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 16 nC @ 8 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.067" (1.7mm)  Siliconix / Vishay Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  Siliconix / Vishay MOSFET Transistors Width 0.067" (1.7mm)  
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