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Surface Mounting and SO-8 Package Dual N-Channel 30 V Voltage (D-S) Power MOSFET

Current drain is 10 A (channel1), 10.5 A (channel2)

Operating and storage temperature is -55 °C to +150 °C
Resistance drain to source on 0.0145 Ohms (channel1), 0.015 Ohms (channel2). Power dissipation is 3.3 W (channel1), 3.5 W (channel2).

Application	DC?DC converters, notebook
Brand/Series	SI48 Series
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	10, 10.5 A
Dimensions	5 x 4 x 1.55 mm
Gate Charge, Total	6.6/8.9 nC
Height	0.061" (1.55mm)
Length	0.196" (5mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Package Type	SO-8
Polarization	N-Channel
Power Dissipation	3.3, 3.5 W
Resistance, Drain to Source On	0.023, 0.22 Ω
Temperature, Operating	-55 to 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	54/47 °C/W
Time, Turn-Off Delay	21, 27 ns
Time, Turn-On Delay	8, 9 ns
Transconductance, Forward	30, 35 S
Typical Gate Charge @ Vgs	6.6 nC @ 4.5 V, 8.9 nC @ 4.5 V
Voltage, Breakdown, Drain to Source	30 V
Voltage, Drain to Source	30 V
Voltage, Forward, Diode	1.1/0.5 V
Voltage, Gate to Source	20 V
Width	0.157" (4mm)
关键词

Application DC?DC converters, notebook  Siliconix / Vishay Application DC?DC converters, notebook  MOSFET Transistors Application DC?DC converters, notebook  Siliconix / Vishay MOSFET Transistors Application DC?DC converters, notebook   Brand/Series SI48 Series  Siliconix / Vishay Brand/Series SI48 Series  MOSFET Transistors Brand/Series SI48 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI48 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 10, 10.5 A  Siliconix / Vishay Current, Drain 10, 10.5 A  MOSFET Transistors Current, Drain 10, 10.5 A  Siliconix / Vishay MOSFET Transistors Current, Drain 10, 10.5 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Gate Charge, Total 6.6/8.9 nC  Siliconix / Vishay Gate Charge, Total 6.6/8.9 nC  MOSFET Transistors Gate Charge, Total 6.6/8.9 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 6.6/8.9 nC   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 3.3, 3.5 W  Siliconix / Vishay Power Dissipation 3.3, 3.5 W  MOSFET Transistors Power Dissipation 3.3, 3.5 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 3.3, 3.5 W   Resistance, Drain to Source On 0.023, 0.22 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.023, 0.22 Ω  MOSFET Transistors Resistance, Drain to Source On 0.023, 0.22 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.023, 0.22 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 54/47 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 54/47 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 54/47 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 54/47 °C/W   Time, Turn-Off Delay 21, 27 ns  Siliconix / Vishay Time, Turn-Off Delay 21, 27 ns  MOSFET Transistors Time, Turn-Off Delay 21, 27 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 21, 27 ns   Time, Turn-On Delay 8, 9 ns  Siliconix / Vishay Time, Turn-On Delay 8, 9 ns  MOSFET Transistors Time, Turn-On Delay 8, 9 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 8, 9 ns   Transconductance, Forward 30, 35 S  Siliconix / Vishay Transconductance, Forward 30, 35 S  MOSFET Transistors Transconductance, Forward 30, 35 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 30, 35 S   Typical Gate Charge @ Vgs 6.6 nC @ 4.5 V, 8.9 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 6.6 nC @ 4.5 V, 8.9 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 6.6 nC @ 4.5 V, 8.9 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 6.6 nC @ 4.5 V, 8.9 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Siliconix / Vishay Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1.1/0.5 V  Siliconix / Vishay Voltage, Forward, Diode 1.1/0.5 V  MOSFET Transistors Voltage, Forward, Diode 1.1/0.5 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.1/0.5 V   Voltage, Gate to Source 20 V  Siliconix / Vishay Voltage, Gate to Source 20 V  MOSFET Transistors Voltage, Gate to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source 20 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)