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Features:

Halogen-Free According to IEC 61249-2-21 Available

TrenchFET® Power MOSFET: 1.8 V Rated

Brand/Series	SI54 Series
Capacitance, Input	1400 pF @ -6 V
Channel Mode	Enhancement
Channel Type	P
Configuration	Hex Drain
Current, Drain	-6 A
Dimensions	3.1 x 1.7 x 1.1 mm
Fall Time	110 ns
Gate Charge, Total	40 nC
Height	0.043" (1.1mm)
Length	0.122" (3.1mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	8
Operating and Storage Temperature	-55 to +150 °C
Package Type	1206-8 ChipFET
Polarization	P-Channel
Power Dissipation	6.3 W
Resistance, Drain to Source On	0.028 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	50 °C/W
Time, Turn-Off Delay	100 ns
Time, Turn-On Delay	10 ns
Transconductance, Forward	22 S
Typical Gate Charge @ Vgs	26 nC @ -6 V
Voltage, Breakdown, Drain to Source	-12 V
Voltage, Drain to Source	-12 V
Voltage, Forward, Diode	-1.2 V
Voltage, Gate to Source	±8 V
Width	0.067" (1.7mm)
关键词

Brand/Series SI54 Series  Siliconix / Vishay Brand/Series SI54 Series  MOSFET Transistors Brand/Series SI54 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI54 Series   Capacitance, Input 1400 pF @ -6 V  Siliconix / Vishay Capacitance, Input 1400 pF @ -6 V  MOSFET Transistors Capacitance, Input 1400 pF @ -6 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 1400 pF @ -6 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Hex Drain  Siliconix / Vishay Configuration Hex Drain  MOSFET Transistors Configuration Hex Drain  Siliconix / Vishay MOSFET Transistors Configuration Hex Drain   Current, Drain -6 A  Siliconix / Vishay Current, Drain -6 A  MOSFET Transistors Current, Drain -6 A  Siliconix / Vishay MOSFET Transistors Current, Drain -6 A   Dimensions 3.1 x 1.7 x 1.1 mm  Siliconix / Vishay Dimensions 3.1 x 1.7 x 1.1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1.1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.1 x 1.7 x 1.1 mm   Fall Time 110 ns  Siliconix / Vishay Fall Time 110 ns  MOSFET Transistors Fall Time 110 ns  Siliconix / Vishay MOSFET Transistors Fall Time 110 ns   Gate Charge, Total 40 nC  Siliconix / Vishay Gate Charge, Total 40 nC  MOSFET Transistors Gate Charge, Total 40 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 40 nC   Height 0.043" (1.1mm)  Siliconix / Vishay Height 0.043" (1.1mm)  MOSFET Transistors Height 0.043" (1.1mm)  Siliconix / Vishay MOSFET Transistors Height 0.043" (1.1mm)   Length 0.122" (3.1mm)  Siliconix / Vishay Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type 1206-8 ChipFET  Siliconix / Vishay Package Type 1206-8 ChipFET  MOSFET Transistors Package Type 1206-8 ChipFET  Siliconix / Vishay MOSFET Transistors Package Type 1206-8 ChipFET   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 6.3 W  Siliconix / Vishay Power Dissipation 6.3 W  MOSFET Transistors Power Dissipation 6.3 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 6.3 W   Resistance, Drain to Source On 0.028 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.028 Ω  MOSFET Transistors Resistance, Drain to Source On 0.028 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.028 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 50 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 50 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 50 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 50 °C/W   Time, Turn-Off Delay 100 ns  Siliconix / Vishay Time, Turn-Off Delay 100 ns  MOSFET Transistors Time, Turn-Off Delay 100 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 100 ns   Time, Turn-On Delay 10 ns  Siliconix / Vishay Time, Turn-On Delay 10 ns  MOSFET Transistors Time, Turn-On Delay 10 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 10 ns   Transconductance, Forward 22 S  Siliconix / Vishay Transconductance, Forward 22 S  MOSFET Transistors Transconductance, Forward 22 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 22 S   Typical Gate Charge @ Vgs 26 nC @ -6 V  Siliconix / Vishay Typical Gate Charge @ Vgs 26 nC @ -6 V  MOSFET Transistors Typical Gate Charge @ Vgs 26 nC @ -6 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 26 nC @ -6 V   Voltage, Breakdown, Drain to Source -12 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -12 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -12 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -12 V   Voltage, Drain to Source -12 V  Siliconix / Vishay Voltage, Drain to Source -12 V  MOSFET Transistors Voltage, Drain to Source -12 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -12 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.067" (1.7mm)  Siliconix / Vishay Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  Siliconix / Vishay MOSFET Transistors Width 0.067" (1.7mm)