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SI6463BDQ-T1-E3/BKN - 

P-CH MOSFET TSSOP-8 20V 15MOHM @ 4.5V

Siliconix / Vishay SI6463BDQ-T1-E3/BKN
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SI6463BDQ-T1-E3/BKN
仓库库存编号:
70026368
技术数据表:
View SI6463BDQ-T1-E3/BKN Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SI6463BDQ-T1-E3/BKN产品信息

  Brand/Series  SI64 Series  
  Channel Mode  Enhancement  
  Channel Type  P  
  Configuration  Dual Drain, Dual Gate, Quad  
  Current, Drain  -4.9 A  
  Dimensions  4.5 x 3.1 x 1.05 mm  
  Fall Time  150 ns  
  Gate Charge, Total  60 nC  
  Height  0.041" (1.05mm)  
  Length  0.177" (4.5mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  2  
  Number of Pins  8  
  Operating and Storage Temperature  -55 to +150 °C  
  Package Type  TSSOP  
  Polarization  P-Channel  
  Power Dissipation  1.05 W  
  Resistance, Drain to Source On  0.015 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Thermal Resistance, Junction to Ambient  120 °C/W  
  Time, Turn-Off Delay  300 ns  
  Time, Turn-On Delay  55 ns  
  Transconductance, Forward  34 S  
  Typical Gate Charge @ Vgs  40 nC @ -10 V  
  Voltage, Breakdown, Drain to Source  -20 V  
  Voltage, Drain to Source  -20 V  
  Voltage, Forward, Diode  -1.1 V  
  Voltage, Gate to Source  ±8 V  
  Width  0.122" (3.1mm)  
关键词         

SI6463BDQ-T1-E3/BKN相关搜索

Brand/Series SI64 Series  Siliconix / Vishay Brand/Series SI64 Series  MOSFET Transistors Brand/Series SI64 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI64 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay Configuration Dual Drain, Dual Gate, Quad  MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad   Current, Drain -4.9 A  Siliconix / Vishay Current, Drain -4.9 A  MOSFET Transistors Current, Drain -4.9 A  Siliconix / Vishay MOSFET Transistors Current, Drain -4.9 A   Dimensions 4.5 x 3.1 x 1.05 mm  Siliconix / Vishay Dimensions 4.5 x 3.1 x 1.05 mm  MOSFET Transistors Dimensions 4.5 x 3.1 x 1.05 mm  Siliconix / Vishay MOSFET Transistors Dimensions 4.5 x 3.1 x 1.05 mm   Fall Time 150 ns  Siliconix / Vishay Fall Time 150 ns  MOSFET Transistors Fall Time 150 ns  Siliconix / Vishay MOSFET Transistors Fall Time 150 ns   Gate Charge, Total 60 nC  Siliconix / Vishay Gate Charge, Total 60 nC  MOSFET Transistors Gate Charge, Total 60 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 60 nC   Height 0.041" (1.05mm)  Siliconix / Vishay Height 0.041" (1.05mm)  MOSFET Transistors Height 0.041" (1.05mm)  Siliconix / Vishay MOSFET Transistors Height 0.041" (1.05mm)   Length 0.177" (4.5mm)  Siliconix / Vishay Length 0.177" (4.5mm)  MOSFET Transistors Length 0.177" (4.5mm)  Siliconix / Vishay MOSFET Transistors Length 0.177" (4.5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TSSOP  Siliconix / Vishay Package Type TSSOP  MOSFET Transistors Package Type TSSOP  Siliconix / Vishay MOSFET Transistors Package Type TSSOP   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.05 W  Siliconix / Vishay Power Dissipation 1.05 W  MOSFET Transistors Power Dissipation 1.05 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.05 W   Resistance, Drain to Source On 0.015 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.015 Ω  MOSFET Transistors Resistance, Drain to Source On 0.015 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.015 Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 120 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 120 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 120 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 120 °C/W   Time, Turn-Off Delay 300 ns  Siliconix / Vishay Time, Turn-Off Delay 300 ns  MOSFET Transistors Time, Turn-Off Delay 300 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 300 ns   Time, Turn-On Delay 55 ns  Siliconix / Vishay Time, Turn-On Delay 55 ns  MOSFET Transistors Time, Turn-On Delay 55 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 55 ns   Transconductance, Forward 34 S  Siliconix / Vishay Transconductance, Forward 34 S  MOSFET Transistors Transconductance, Forward 34 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 34 S   Typical Gate Charge @ Vgs 40 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 40 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 40 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 40 nC @ -10 V   Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -1.1 V  Siliconix / Vishay Voltage, Forward, Diode -1.1 V  MOSFET Transistors Voltage, Forward, Diode -1.1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.1 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.122" (3.1mm)  Siliconix / Vishay Width 0.122" (3.1mm)  MOSFET Transistors Width 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Width 0.122" (3.1mm)  
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