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SUP90P06-09L-E3 - 

P-CHANNEL 60-V (D-S) 175C MOSFET

Siliconix / Vishay SUP90P06-09L-E3
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SUP90P06-09L-E3
仓库库存编号:
70026317
技术数据表:
View SUP90P06-09L-E3 Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SUP90P06-09L-E3产品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
  • SUP90P06-09L-E3产品信息

      Brand/Series  SUP Series  
      Capacitance, Input  9200 pF @ -25 V  
      Channel Mode  Enhancement  
      Channel Type  P  
      Configuration  Single  
      Current, Drain  -67 A  
      Dimensions  10.51 x 4.65 x 15.49 mm  
      Fall Time  450 ns  
      Height  0.61" (15.49mm)  
      Length  0.413" (10.51mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +175 °C  
      Package Type  TO-220AB  
      Polarization  P-Channel  
      Power Dissipation  250 W  
      Resistance, Drain to Source On  0.019 Ω  
      Resistance, Thermal, Junction to Case  0.6 °C/W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Thermal Resistance, Junction to Ambient  62 °C/W  
      Time, Turn-Off Delay  140 ns  
      Time, Turn-On Delay  20 ns  
      Transconductance, Forward  20 S  
      Typical Gate Charge @ Vgs  160 nC @ -10 V  
      Voltage, Breakdown, Drain to Source  -60 V  
      Voltage, Drain to Source  -60 V  
      Voltage, Forward, Diode  -1.5 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.183" (4.65mm)  
    关键词         

    SUP90P06-09L-E3相关搜索

    Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Capacitance, Input 9200 pF @ -25 V  Siliconix / Vishay Capacitance, Input 9200 pF @ -25 V  MOSFET Transistors Capacitance, Input 9200 pF @ -25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 9200 pF @ -25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -67 A  Siliconix / Vishay Current, Drain -67 A  MOSFET Transistors Current, Drain -67 A  Siliconix / Vishay MOSFET Transistors Current, Drain -67 A   Dimensions 10.51 x 4.65 x 15.49 mm  Siliconix / Vishay Dimensions 10.51 x 4.65 x 15.49 mm  MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm  Siliconix / Vishay MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm   Fall Time 450 ns  Siliconix / Vishay Fall Time 450 ns  MOSFET Transistors Fall Time 450 ns  Siliconix / Vishay MOSFET Transistors Fall Time 450 ns   Height 0.61" (15.49mm)  Siliconix / Vishay Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  Siliconix / Vishay MOSFET Transistors Height 0.61" (15.49mm)   Length 0.413" (10.51mm)  Siliconix / Vishay Length 0.413" (10.51mm)  MOSFET Transistors Length 0.413" (10.51mm)  Siliconix / Vishay MOSFET Transistors Length 0.413" (10.51mm)   Mounting Type Through Hole  Siliconix / Vishay Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Siliconix / Vishay MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +175 °C  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +175 °C   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 250 W  Siliconix / Vishay Power Dissipation 250 W  MOSFET Transistors Power Dissipation 250 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 250 W   Resistance, Drain to Source On 0.019 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.019 Ω  MOSFET Transistors Resistance, Drain to Source On 0.019 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.019 Ω   Resistance, Thermal, Junction to Case 0.6 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.6 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.6 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.6 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 62 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 62 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C/W   Time, Turn-Off Delay 140 ns  Siliconix / Vishay Time, Turn-Off Delay 140 ns  MOSFET Transistors Time, Turn-Off Delay 140 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 140 ns   Time, Turn-On Delay 20 ns  Siliconix / Vishay Time, Turn-On Delay 20 ns  MOSFET Transistors Time, Turn-On Delay 20 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 20 ns   Transconductance, Forward 20 S  Siliconix / Vishay Transconductance, Forward 20 S  MOSFET Transistors Transconductance, Forward 20 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 20 S   Typical Gate Charge @ Vgs 160 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 160 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 160 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 160 nC @ -10 V   Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source -60 V  Siliconix / Vishay Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode -1.5 V  Siliconix / Vishay Voltage, Forward, Diode -1.5 V  MOSFET Transistors Voltage, Forward, Diode -1.5 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.5 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.183" (4.65mm)  Siliconix / Vishay Width 0.183" (4.65mm)  MOSFET Transistors Width 0.183" (4.65mm)  Siliconix / Vishay MOSFET Transistors Width 0.183" (4.65mm)  
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