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SEMIX303GB12E4S - 

IGBT HALFBRIDGE ULTRAFAST, 1200V, SEMITRANS

SEMIKRON SEMIX303GB12E4S
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SEMIX303GB12E4S
仓库库存编号:
70098358
技术数据表:
View SEMIX303GB12E4S Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SEMIX303GB12E4S产品概述



Features:
  • IGBT4 = 4. Generation (Trench) IGBT
  • VCEsat with Positive Temperature Coefficient
  • High short circuit Capability, Self Limiting to 6 × ICNOM
  • Electronic Welders at fSW Up-to-20 kHz

    Applications:
  • AC Inverter Drives
  • UPS
  • Electronic Welders at fSW Up-to-20 kHz
  • SEMIX303GB12E4S产品信息

      Brand/Series  IGBT Series  
      Channel Type  N  
      Configuration  Dual  
      Current, Collector  466 A  
      Current, Continuous Collector  466 A  
      Dimensions  149.5 x 63.5 x 17 mm  
      Energy Rating  33 mJ  
      Height  0.669" (17mm)  
      Length  5.885" (149.5mm)  
      Mounting Type  Screw  
      Number of Pins  20  
      Package Type  SEMIX 3s  
      Resistance, Thermal, Junction to Case  0.095 K/W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -40 °C  
      Temperature, Operating, Range  -40 to +175 °C  
      Type  Ultrafast  
      Voltage, Collector to Emitter  1200 V  
      Voltage, Collector to Emitter Shorted  1200 V  
      Voltage, Gate to Emitter  20 V  
      Width  2.5" (63.5mm)  
    关键词         

    SEMIX303GB12E4S相关搜索

    Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Dual  SEMIKRON Configuration Dual  IGBT Transistor Modules Configuration Dual  SEMIKRON IGBT Transistor Modules Configuration Dual   Current, Collector 466 A  SEMIKRON Current, Collector 466 A  IGBT Transistor Modules Current, Collector 466 A  SEMIKRON IGBT Transistor Modules Current, Collector 466 A   Current, Continuous Collector 466 A  SEMIKRON Current, Continuous Collector 466 A  IGBT Transistor Modules Current, Continuous Collector 466 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 466 A   Dimensions 149.5 x 63.5 x 17 mm  SEMIKRON Dimensions 149.5 x 63.5 x 17 mm  IGBT Transistor Modules Dimensions 149.5 x 63.5 x 17 mm  SEMIKRON IGBT Transistor Modules Dimensions 149.5 x 63.5 x 17 mm   Energy Rating 33 mJ  SEMIKRON Energy Rating 33 mJ  IGBT Transistor Modules Energy Rating 33 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 33 mJ   Height 0.669" (17mm)  SEMIKRON Height 0.669" (17mm)  IGBT Transistor Modules Height 0.669" (17mm)  SEMIKRON IGBT Transistor Modules Height 0.669" (17mm)   Length 5.885" (149.5mm)  SEMIKRON Length 5.885" (149.5mm)  IGBT Transistor Modules Length 5.885" (149.5mm)  SEMIKRON IGBT Transistor Modules Length 5.885" (149.5mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 20  SEMIKRON Number of Pins 20  IGBT Transistor Modules Number of Pins 20  SEMIKRON IGBT Transistor Modules Number of Pins 20   Package Type SEMIX 3s  SEMIKRON Package Type SEMIX 3s  IGBT Transistor Modules Package Type SEMIX 3s  SEMIKRON IGBT Transistor Modules Package Type SEMIX 3s   Resistance, Thermal, Junction to Case 0.095 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.095 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.095 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.095 K/W   Temperature, Operating, Maximum +175 °C  SEMIKRON Temperature, Operating, Maximum +175 °C  IGBT Transistor Modules Temperature, Operating, Maximum +175 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +175 °C  SEMIKRON Temperature, Operating, Range -40 to +175 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +175 °C   Type Ultrafast  SEMIKRON Type Ultrafast  IGBT Transistor Modules Type Ultrafast  SEMIKRON IGBT Transistor Modules Type Ultrafast   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter 20 V  SEMIKRON Voltage, Gate to Emitter 20 V  IGBT Transistor Modules Voltage, Gate to Emitter 20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter 20 V   Width 2.5" (63.5mm)  SEMIKRON Width 2.5" (63.5mm)  IGBT Transistor Modules Width 2.5" (63.5mm)  SEMIKRON IGBT Transistor Modules Width 2.5" (63.5mm)  
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