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SKM100GB063D - 

IGBT; D-61; IGBT; 600 V, 130 A; 600 V; 130 A; 600 V; -40 to 150 degC

SEMIKRON SKM100GB063D
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SKM100GB063D
仓库库存编号:
70098208
技术数据表:
View SKM100GB063D Datasheet Datasheet
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SKM100GB063D产品概述

IGBT Transistors

SKM100GB063D产品信息

  Brand/Series  IGBT Series  
  Capacitance, Gate  5.6 nF  
  Channel Type  N  
  Configuration  Dual  
  Current, Collector  130 A  
  Current, Continuous Collector  130 A  
  Energy Rating  7 mJ  
  Fall Time  35 nS (Typ.)  
  Height  1.201" (30.5mm)  
  Mounting Type  Screw  
  Operating and Storage Temperature  -40 to 150 °C  
  Package Type  Semitrans2  
  Polarity  N-Channel  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.27 K/W  
  Switching Loss  4 mJ (Typ.)  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Range  -40 to +150 °C  
  Time, Rise  40 nS (Typ.)  
  Transistor Type  IGBT  
  Type  Standard  
  Voltage and Current Rating  600 V, 130 A  
  Voltage, Breakdown, Collector to Emitter  600 V  
  Voltage, Collector to Emitter  600 V  
  Voltage, Collector to Emitter Shorted  600 V  
  Voltage, Gate Threshold, Range  4.5 V (Min.) to 6.5 V (Max.)  
  Voltage, Saturation, Collector to Emitter  600 V  
  Width  1.339" (34mm)  
关键词         

SKM100GB063D相关搜索

Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 5.6 nF  SEMIKRON Capacitance, Gate 5.6 nF  IGBT Transistor Modules Capacitance, Gate 5.6 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 5.6 nF   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Dual  SEMIKRON Configuration Dual  IGBT Transistor Modules Configuration Dual  SEMIKRON IGBT Transistor Modules Configuration Dual   Current, Collector 130 A  SEMIKRON Current, Collector 130 A  IGBT Transistor Modules Current, Collector 130 A  SEMIKRON IGBT Transistor Modules Current, Collector 130 A   Current, Continuous Collector 130 A  SEMIKRON Current, Continuous Collector 130 A  IGBT Transistor Modules Current, Continuous Collector 130 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 130 A   Energy Rating 7 mJ  SEMIKRON Energy Rating 7 mJ  IGBT Transistor Modules Energy Rating 7 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 7 mJ   Fall Time 35 nS (Typ.)  SEMIKRON Fall Time 35 nS (Typ.)  IGBT Transistor Modules Fall Time 35 nS (Typ.)  SEMIKRON IGBT Transistor Modules Fall Time 35 nS (Typ.)   Height 1.201" (30.5mm)  SEMIKRON Height 1.201" (30.5mm)  IGBT Transistor Modules Height 1.201" (30.5mm)  SEMIKRON IGBT Transistor Modules Height 1.201" (30.5mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Operating and Storage Temperature -40 to 150 °C  SEMIKRON Operating and Storage Temperature -40 to 150 °C  IGBT Transistor Modules Operating and Storage Temperature -40 to 150 °C  SEMIKRON IGBT Transistor Modules Operating and Storage Temperature -40 to 150 °C   Package Type Semitrans2  SEMIKRON Package Type Semitrans2  IGBT Transistor Modules Package Type Semitrans2  SEMIKRON IGBT Transistor Modules Package Type Semitrans2   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Thermal, Junction to Case 0.27 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.27 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.27 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.27 K/W   Switching Loss 4 mJ (Typ.)  SEMIKRON Switching Loss 4 mJ (Typ.)  IGBT Transistor Modules Switching Loss 4 mJ (Typ.)  SEMIKRON IGBT Transistor Modules Switching Loss 4 mJ (Typ.)   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Time, Rise 40 nS (Typ.)  SEMIKRON Time, Rise 40 nS (Typ.)  IGBT Transistor Modules Time, Rise 40 nS (Typ.)  SEMIKRON IGBT Transistor Modules Time, Rise 40 nS (Typ.)   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Standard  SEMIKRON Type Standard  IGBT Transistor Modules Type Standard  SEMIKRON IGBT Transistor Modules Type Standard   Voltage and Current Rating 600 V, 130 A  SEMIKRON Voltage and Current Rating 600 V, 130 A  IGBT Transistor Modules Voltage and Current Rating 600 V, 130 A  SEMIKRON IGBT Transistor Modules Voltage and Current Rating 600 V, 130 A   Voltage, Breakdown, Collector to Emitter 600 V  SEMIKRON Voltage, Breakdown, Collector to Emitter 600 V  IGBT Transistor Modules Voltage, Breakdown, Collector to Emitter 600 V  SEMIKRON IGBT Transistor Modules Voltage, Breakdown, Collector to Emitter 600 V   Voltage, Collector to Emitter 600 V  SEMIKRON Voltage, Collector to Emitter 600 V  IGBT Transistor Modules Voltage, Collector to Emitter 600 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter Shorted 600 V  SEMIKRON Voltage, Collector to Emitter Shorted 600 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 600 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 600 V   Voltage, Gate Threshold, Range 4.5 V (Min.) to 6.5 V (Max.)  SEMIKRON Voltage, Gate Threshold, Range 4.5 V (Min.) to 6.5 V (Max.)  IGBT Transistor Modules Voltage, Gate Threshold, Range 4.5 V (Min.) to 6.5 V (Max.)  SEMIKRON IGBT Transistor Modules Voltage, Gate Threshold, Range 4.5 V (Min.) to 6.5 V (Max.)   Voltage, Saturation, Collector to Emitter 600 V  SEMIKRON Voltage, Saturation, Collector to Emitter 600 V  IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 600 V  SEMIKRON IGBT Transistor Modules Voltage, Saturation, Collector to Emitter 600 V   Width 1.339" (34mm)  SEMIKRON Width 1.339" (34mm)  IGBT Transistor Modules Width 1.339" (34mm)  SEMIKRON IGBT Transistor Modules Width 1.339" (34mm)  
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