amphenol代理商
专业销售Amphenol(安费诺)全系列产品-英国2号仓库
库存查询
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索:    
热门搜索词:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

SKM 200 GB173D - 

Module, Transistor; N-Channel IGBT; 1700 V; 220 A @ degC; 20 V; Case D 56

SEMIKRON SKM 200 GB173D
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SKM 200 GB173D
仓库库存编号:
70098219
技术数据表:
View SKM 200 GB173D Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SKM 200 GB173D产品概述

N-Channel, 1700 V Collector-to-Emitter Voltage, Insulated Gate Bipolar Transistor Module
  • MOS input (voltage controlled)
  • homogeneouss Si-structure
  • Low inductance case
  • Very low tail current with low temperature dependence
  • High short circuit capability
  • Latch-up free
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using (DCB) Dir
    For public transport, switching applications.
  • SKM 200 GB173D产品信息

      Brand/Series  IGBT Series  
      Capacitance, Gate  20 nF  
      Capacitance, Input  20 nF (Typ.)  
      Channel Type  N  
      Configuration  Dual  
      Current, Collector  220 A  
      Current, Continuous Collector  220 A  
      Dimensions  106.4 x 61.4 x 30.5 mm  
      Energy Rating  140 mJ  
      Height  1.201" (30.5mm)  
      Inductance, Collector to Emitter  20 nH (Max.)  
      Length  4.188" (106.4mm)  
      Mounting Type  Screw  
      Number of Pins  7  
      Package Type  D 56  
      Polarity  N-Channel  
      Primary Type  Si  
      Resistance, Collector to Emitter  11.7 Milliohms (Typ.)  
      Resistance, Thermal  0.1 K?W (Max.) (Junction-Case)  
      Resistance, Thermal, Junction to Case  0.1 K/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -40 °C  
      Temperature, Operating, Range  -40 to +150 °C  
      Time, Turn-Off  750 ns (Typ.)  
      Time, Turn-On  580 ns (Typ.)  
      Transistor Type  N-Channel IGBT  
      Type  Fast  
      Voltage, Collector to Emitter  1700 V  
      Voltage, Collector to Emitter Shorted  1700 V  
      Voltage, Gate to Emitter  ±20 V  
      Voltage, Gate to Emitter Threshold  5.5 V (Typ.)  
      Width  2.417" (61.4mm)  
    关键词         

    SKM 200 GB173D相关搜索

    Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 20 nF  SEMIKRON Capacitance, Gate 20 nF  IGBT Transistor Modules Capacitance, Gate 20 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 20 nF   Capacitance, Input 20 nF (Typ.)  SEMIKRON Capacitance, Input 20 nF (Typ.)  IGBT Transistor Modules Capacitance, Input 20 nF (Typ.)  SEMIKRON IGBT Transistor Modules Capacitance, Input 20 nF (Typ.)   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Dual  SEMIKRON Configuration Dual  IGBT Transistor Modules Configuration Dual  SEMIKRON IGBT Transistor Modules Configuration Dual   Current, Collector 220 A  SEMIKRON Current, Collector 220 A  IGBT Transistor Modules Current, Collector 220 A  SEMIKRON IGBT Transistor Modules Current, Collector 220 A   Current, Continuous Collector 220 A  SEMIKRON Current, Continuous Collector 220 A  IGBT Transistor Modules Current, Continuous Collector 220 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 220 A   Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 30.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm   Energy Rating 140 mJ  SEMIKRON Energy Rating 140 mJ  IGBT Transistor Modules Energy Rating 140 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 140 mJ   Height 1.201" (30.5mm)  SEMIKRON Height 1.201" (30.5mm)  IGBT Transistor Modules Height 1.201" (30.5mm)  SEMIKRON IGBT Transistor Modules Height 1.201" (30.5mm)   Inductance, Collector to Emitter 20 nH (Max.)  SEMIKRON Inductance, Collector to Emitter 20 nH (Max.)  IGBT Transistor Modules Inductance, Collector to Emitter 20 nH (Max.)  SEMIKRON IGBT Transistor Modules Inductance, Collector to Emitter 20 nH (Max.)   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 7  SEMIKRON Number of Pins 7  IGBT Transistor Modules Number of Pins 7  SEMIKRON IGBT Transistor Modules Number of Pins 7   Package Type D 56  SEMIKRON Package Type D 56  IGBT Transistor Modules Package Type D 56  SEMIKRON IGBT Transistor Modules Package Type D 56   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Collector to Emitter 11.7 Milliohms (Typ.)  SEMIKRON Resistance, Collector to Emitter 11.7 Milliohms (Typ.)  IGBT Transistor Modules Resistance, Collector to Emitter 11.7 Milliohms (Typ.)  SEMIKRON IGBT Transistor Modules Resistance, Collector to Emitter 11.7 Milliohms (Typ.)   Resistance, Thermal 0.1 K?W (Max.) (Junction-Case)  SEMIKRON Resistance, Thermal 0.1 K?W (Max.) (Junction-Case)  IGBT Transistor Modules Resistance, Thermal 0.1 K?W (Max.) (Junction-Case)  SEMIKRON IGBT Transistor Modules Resistance, Thermal 0.1 K?W (Max.) (Junction-Case)   Resistance, Thermal, Junction to Case 0.1 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.1 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.1 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.1 K/W   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Time, Turn-Off 750 ns (Typ.)  SEMIKRON Time, Turn-Off 750 ns (Typ.)  IGBT Transistor Modules Time, Turn-Off 750 ns (Typ.)  SEMIKRON IGBT Transistor Modules Time, Turn-Off 750 ns (Typ.)   Time, Turn-On 580 ns (Typ.)  SEMIKRON Time, Turn-On 580 ns (Typ.)  IGBT Transistor Modules Time, Turn-On 580 ns (Typ.)  SEMIKRON IGBT Transistor Modules Time, Turn-On 580 ns (Typ.)   Transistor Type N-Channel IGBT  SEMIKRON Transistor Type N-Channel IGBT  IGBT Transistor Modules Transistor Type N-Channel IGBT  SEMIKRON IGBT Transistor Modules Transistor Type N-Channel IGBT   Type Fast  SEMIKRON Type Fast  IGBT Transistor Modules Type Fast  SEMIKRON IGBT Transistor Modules Type Fast   Voltage, Collector to Emitter 1700 V  SEMIKRON Voltage, Collector to Emitter 1700 V  IGBT Transistor Modules Voltage, Collector to Emitter 1700 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1700 V   Voltage, Collector to Emitter Shorted 1700 V  SEMIKRON Voltage, Collector to Emitter Shorted 1700 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1700 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1700 V   Voltage, Gate to Emitter ±20 V  SEMIKRON Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  SEMIKRON Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.5 V (Typ.)   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)  
    电话:400-900-3095
    QQ:800152669
    关于我们 | Amphenol简介 | Amphenol产品 | Amphenol产品应用 | Amphenol动态 | 按系列选型 | 按产品规格选型 | Amphenol选型手册 | 付款方式 | 联系我们
    Copyright © 2017 www.amphenol-connect.com All Rights Reserved. 技术支持:电子元器件 ICP备案证书号:粤ICP备11103613号