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SKM400GAL125D - 

IGBT, Ultra Fast; IGBT; 1200 V; 400 A @degC; 20 V; 390 A @ 25 degC; -40

SEMIKRON SKM400GAL125D
声明:图片仅供参考,请以实物为准!
制造商产品编号:
SKM400GAL125D
仓库库存编号:
70098223
技术数据表:
View SKM400GAL125D Datasheet Datasheet
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

SKM400GAL125D产品概述

0.05 K/W (Max.) Thermal Resistance, 20 nH (Max.) Collector to Emitter Inductance, Ultra Fast IGBT
  • N-Channel, homogeneous Si
  • Low inductance case
  • Short tail current with low temperature dependence
  • High short circuit capability
  • Fast & soft inverse CAL diodes
  • Isolated copper baseplate using direct copper bonding technology
  • Large clearance (13 mm) a
  • SKM400GAL125D产品信息

      Brand/Series  IGBT Series  
      Capacitance, Gate  22 nF  
      Capacitance, Input  22 nF (Typ.)  
      Channel Type  N  
      Configuration  Single  
      Current, Collector  400 A  
      Current, Continuous Collector  400 A  
      Dimensions  106.4 x 61.4 x 30.5 mm  
      Energy Rating  35 mJ  
      Height  1.201" (30.5mm)  
      Inductance, Collector to Emitter  20 nH  
      Length  4.188" (106.4mm)  
      Mounting Type  Screw  
      Number of Pins  7  
      Package Type  D 56  
      Polarity  N-Channel  
      Primary Type  Si  
      Resistance, Thermal  0.05 K?W (Max.)  
      Resistance, Thermal, Junction to Case  0.05 K/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -40 °C  
      Temperature, Operating, Range  -40 to +150 °C  
      Time, Turn-Off  500 ns  
      Time, Turn-On  70 ns  
      Transistor Type  IGBT  
      Type  Ultrafast  
      Voltage, Collector to Emitter  1200 V  
      Voltage, Collector to Emitter Shorted  1200 V  
      Voltage, Gate to Emitter  ±20 V  
      Voltage, Gate to Emitter Threshold  5.5 V (Typ.)  
      Width  2.417" (61.4mm)  
    关键词         

    SKM400GAL125D相关搜索

    Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 22 nF  SEMIKRON Capacitance, Gate 22 nF  IGBT Transistor Modules Capacitance, Gate 22 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 22 nF   Capacitance, Input 22 nF (Typ.)  SEMIKRON Capacitance, Input 22 nF (Typ.)  IGBT Transistor Modules Capacitance, Input 22 nF (Typ.)  SEMIKRON IGBT Transistor Modules Capacitance, Input 22 nF (Typ.)   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Single  SEMIKRON Configuration Single  IGBT Transistor Modules Configuration Single  SEMIKRON IGBT Transistor Modules Configuration Single   Current, Collector 400 A  SEMIKRON Current, Collector 400 A  IGBT Transistor Modules Current, Collector 400 A  SEMIKRON IGBT Transistor Modules Current, Collector 400 A   Current, Continuous Collector 400 A  SEMIKRON Current, Continuous Collector 400 A  IGBT Transistor Modules Current, Continuous Collector 400 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 400 A   Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 30.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm   Energy Rating 35 mJ  SEMIKRON Energy Rating 35 mJ  IGBT Transistor Modules Energy Rating 35 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 35 mJ   Height 1.201" (30.5mm)  SEMIKRON Height 1.201" (30.5mm)  IGBT Transistor Modules Height 1.201" (30.5mm)  SEMIKRON IGBT Transistor Modules Height 1.201" (30.5mm)   Inductance, Collector to Emitter 20 nH  SEMIKRON Inductance, Collector to Emitter 20 nH  IGBT Transistor Modules Inductance, Collector to Emitter 20 nH  SEMIKRON IGBT Transistor Modules Inductance, Collector to Emitter 20 nH   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 7  SEMIKRON Number of Pins 7  IGBT Transistor Modules Number of Pins 7  SEMIKRON IGBT Transistor Modules Number of Pins 7   Package Type D 56  SEMIKRON Package Type D 56  IGBT Transistor Modules Package Type D 56  SEMIKRON IGBT Transistor Modules Package Type D 56   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Thermal 0.05 K?W (Max.)  SEMIKRON Resistance, Thermal 0.05 K?W (Max.)  IGBT Transistor Modules Resistance, Thermal 0.05 K?W (Max.)  SEMIKRON IGBT Transistor Modules Resistance, Thermal 0.05 K?W (Max.)   Resistance, Thermal, Junction to Case 0.05 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.05 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.05 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.05 K/W   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Time, Turn-Off 500 ns  SEMIKRON Time, Turn-Off 500 ns  IGBT Transistor Modules Time, Turn-Off 500 ns  SEMIKRON IGBT Transistor Modules Time, Turn-Off 500 ns   Time, Turn-On 70 ns  SEMIKRON Time, Turn-On 70 ns  IGBT Transistor Modules Time, Turn-On 70 ns  SEMIKRON IGBT Transistor Modules Time, Turn-On 70 ns   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Ultrafast  SEMIKRON Type Ultrafast  IGBT Transistor Modules Type Ultrafast  SEMIKRON IGBT Transistor Modules Type Ultrafast   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  SEMIKRON Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  SEMIKRON Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.5 V (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.5 V (Typ.)   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)  
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