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2N6660 - 

Transistor; MOSFET; , N-Channel; 60V; TO-39

Solid State Manufacturing 2N6660
声明:图片仅供参考,请以实物为准!
制造商产品编号:
2N6660
仓库库存编号:
70348183
技术数据表:
 
订购热线: 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大,部分产品信息可能未能及时更新,下单前请与销售人员确认好实时在库数量,谢谢合作!

2N6660产品信息

  Brand/Series  2N666 Series  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  ±1.1 A  
  Dimensions  9.39 x 9.01 x 4.58 mm  
  Height  0.18" (4.57mm)  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-205AF  
  Power Dissipation  6.25 W  
  Resistance, Drain to Source On  5 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  10 ns  
  Time, Turn-On Delay  10 ns  
  Transconductance, Forward  195 mS  
  Voltage, Drain to Source  60 V  
  Voltage, Forward, Diode  -0.9 V  
  Voltage, Gate to Source  ±40 V  
关键词         

2N6660相关搜索

Brand/Series 2N666 Series  Solid State Manufacturing Brand/Series 2N666 Series  MOSFET Transistors Brand/Series 2N666 Series  Solid State Manufacturing MOSFET Transistors Brand/Series 2N666 Series   Channel Mode Enhancement  Solid State Manufacturing Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Solid State Manufacturing MOSFET Transistors Channel Mode Enhancement   Channel Type N  Solid State Manufacturing Channel Type N  MOSFET Transistors Channel Type N  Solid State Manufacturing MOSFET Transistors Channel Type N   Configuration Single  Solid State Manufacturing Configuration Single  MOSFET Transistors Configuration Single  Solid State Manufacturing MOSFET Transistors Configuration Single   Current, Drain ±1.1 A  Solid State Manufacturing Current, Drain ±1.1 A  MOSFET Transistors Current, Drain ±1.1 A  Solid State Manufacturing MOSFET Transistors Current, Drain ±1.1 A   Dimensions 9.39 x 9.01 x 4.58 mm  Solid State Manufacturing Dimensions 9.39 x 9.01 x 4.58 mm  MOSFET Transistors Dimensions 9.39 x 9.01 x 4.58 mm  Solid State Manufacturing MOSFET Transistors Dimensions 9.39 x 9.01 x 4.58 mm   Height 0.18" (4.57mm)  Solid State Manufacturing Height 0.18" (4.57mm)  MOSFET Transistors Height 0.18" (4.57mm)  Solid State Manufacturing MOSFET Transistors Height 0.18" (4.57mm)   Mounting Type Through Hole  Solid State Manufacturing Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Solid State Manufacturing MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Solid State Manufacturing Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Solid State Manufacturing MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Solid State Manufacturing Number of Pins 3  MOSFET Transistors Number of Pins 3  Solid State Manufacturing MOSFET Transistors Number of Pins 3   Package Type TO-205AF  Solid State Manufacturing Package Type TO-205AF  MOSFET Transistors Package Type TO-205AF  Solid State Manufacturing MOSFET Transistors Package Type TO-205AF   Power Dissipation 6.25 W  Solid State Manufacturing Power Dissipation 6.25 W  MOSFET Transistors Power Dissipation 6.25 W  Solid State Manufacturing MOSFET Transistors Power Dissipation 6.25 W   Resistance, Drain to Source On 5 Ω  Solid State Manufacturing Resistance, Drain to Source On 5 Ω  MOSFET Transistors Resistance, Drain to Source On 5 Ω  Solid State Manufacturing MOSFET Transistors Resistance, Drain to Source On 5 Ω   Temperature, Operating, Maximum +150 °C  Solid State Manufacturing Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Solid State Manufacturing MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Solid State Manufacturing Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Solid State Manufacturing MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Solid State Manufacturing Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Solid State Manufacturing MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 10 ns  Solid State Manufacturing Time, Turn-Off Delay 10 ns  MOSFET Transistors Time, Turn-Off Delay 10 ns  Solid State Manufacturing MOSFET Transistors Time, Turn-Off Delay 10 ns   Time, Turn-On Delay 10 ns  Solid State Manufacturing Time, Turn-On Delay 10 ns  MOSFET Transistors Time, Turn-On Delay 10 ns  Solid State Manufacturing MOSFET Transistors Time, Turn-On Delay 10 ns   Transconductance, Forward 195 mS  Solid State Manufacturing Transconductance, Forward 195 mS  MOSFET Transistors Transconductance, Forward 195 mS  Solid State Manufacturing MOSFET Transistors Transconductance, Forward 195 mS   Voltage, Drain to Source 60 V  Solid State Manufacturing Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  Solid State Manufacturing MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode -0.9 V  Solid State Manufacturing Voltage, Forward, Diode -0.9 V  MOSFET Transistors Voltage, Forward, Diode -0.9 V  Solid State Manufacturing MOSFET Transistors Voltage, Forward, Diode -0.9 V   Voltage, Gate to Source ±40 V  Solid State Manufacturing Voltage, Gate to Source ±40 V  MOSFET Transistors Voltage, Gate to Source ±40 V  Solid State Manufacturing MOSFET Transistors Voltage, Gate to Source ±40 V  
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