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NTE249 - 

TRANSISTOR NPN SILICON DARLINGTON 100V IC=16A TO-3 CASE POWER AMP COMP'L TO NTE2

NTE Electronics, Inc. NTE249
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE249
仓库库存编号：
70215738
技术数据表：
View NTE249 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE249产品概述

Silicon Complementary Transistors Darlington Power Amplifiers

NTE249产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  16 A  
  Current, Continuous Collector  16 A  
  Current, Gain  1000  
  Current, Output  16 A  
  Current, Output, Leakage  3 mA  
  Device Dissipation  150 W  
  Diameter  22.2 mm  
  Dimensions  22.2 Dia. x 8.89 H mm  
  Gain, DC Current, Minimum  1000  
  Height  0.35" (8.89mm)  
  Input Voltage  5 V  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  2  
  Number of Pins  3  
  Package Type  TO-3  
  Polarity  NPN  
  Power Dissipation  150 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  1.17 °C⁄W  
  Temperature Range, Junction, Operating  -55 to +200 °C  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +200 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Amplifier, Power  
  Voltage, Breakdown, Collector to Emitter  100 V  
  Voltage, Collector to Base  100 V  
  Voltage, Collector to Emitter  100 V  
  Voltage, Collector to Emitter, Saturation  4 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Output  100 V  
关键词         

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DC Current, Minimum 1000  Bipolar Transistors Gain, DC Current, Minimum 1000  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 1000   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Input Voltage 5 V  NTE Electronics, Inc. Input Voltage 5 V  Bipolar Transistors Input Voltage 5 V  NTE Electronics, Inc. Bipolar Transistors Input Voltage 5 V   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 2  NTE Electronics, Inc. Number of Elements per Chip 2  Bipolar Transistors Number of Elements per Chip 2  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 2   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 150 W  NTE Electronics, Inc. Power Dissipation 150 W  Bipolar Transistors Power Dissipation 150 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 150 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1.17 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1.17 °C⁄W  Bipolar Transistors Resistance, 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Emitter 100 V   Voltage, Collector to Base 100 V  NTE Electronics, Inc. Voltage, Collector to Base 100 V  Bipolar Transistors Voltage, Collector to Base 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 100 V   Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Voltage, Collector to Emitter 100 V  Bipolar Transistors Voltage, Collector to Emitter 100 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 100 V   Voltage, Collector to Emitter, Saturation 4 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Output 100 V  NTE Electronics, 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