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Capacitance, Gate	48000 pF
Channel Type	N
Configuration	Single
Current, Collector	300 A
Current, Continuous Collector	300 A
Dimensions	108 x 62 x 25 mm
Height	0.984" (25mm)
Length	4.251" (108mm)
Mounting Type	Screw
Number of Pins	4
Package Type	M129
Polarity	N-Channel
Power Dissipation	2100 W
Resistance, Thermal, Junction to Case	0.06 °C/W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Range	Maximum of +150 °C
Voltage, Collector to Emitter	1200 V
Voltage, Collector to Emitter Shorted	1200 V
Voltage, Gate to Emitter	±20 V
Width	2.441" (62mm)
关键词

Capacitance, Gate 48000 pF  Fuji Semiconductor Capacitance, Gate 48000 pF  IGBT Transistor Modules Capacitance, Gate 48000 pF  Fuji Semiconductor IGBT Transistor Modules Capacitance, Gate 48000 pF   Channel Type N  Fuji Semiconductor Channel Type N  IGBT Transistor Modules Channel Type N  Fuji Semiconductor IGBT Transistor Modules Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  IGBT Transistor Modules Configuration Single  Fuji Semiconductor IGBT Transistor Modules Configuration Single   Current, Collector 300 A  Fuji Semiconductor Current, Collector 300 A  IGBT Transistor Modules Current, Collector 300 A  Fuji Semiconductor IGBT Transistor Modules Current, Collector 300 A   Current, Continuous Collector 300 A  Fuji Semiconductor Current, Continuous Collector 300 A  IGBT Transistor Modules Current, Continuous Collector 300 A  Fuji Semiconductor IGBT Transistor Modules Current, Continuous Collector 300 A   Dimensions 108 x 62 x 25 mm  Fuji Semiconductor Dimensions 108 x 62 x 25 mm  IGBT Transistor Modules Dimensions 108 x 62 x 25 mm  Fuji Semiconductor IGBT Transistor Modules Dimensions 108 x 62 x 25 mm   Height 0.984" (25mm)  Fuji Semiconductor Height 0.984" (25mm)  IGBT Transistor Modules Height 0.984" (25mm)  Fuji Semiconductor IGBT Transistor Modules Height 0.984" (25mm)   Length 4.251" (108mm)  Fuji Semiconductor Length 4.251" (108mm)  IGBT Transistor Modules Length 4.251" (108mm)  Fuji Semiconductor IGBT Transistor Modules Length 4.251" (108mm)   Mounting Type Screw  Fuji Semiconductor Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  Fuji Semiconductor IGBT Transistor Modules Mounting Type Screw   Number of Pins 4  Fuji Semiconductor Number of Pins 4  IGBT Transistor Modules Number of Pins 4  Fuji Semiconductor IGBT Transistor Modules Number of Pins 4   Package Type M129  Fuji Semiconductor Package Type M129  IGBT Transistor Modules Package Type M129  Fuji Semiconductor IGBT Transistor Modules Package Type M129   Polarity N-Channel  Fuji Semiconductor Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  Fuji Semiconductor IGBT Transistor Modules Polarity N-Channel   Power Dissipation 2100 W  Fuji Semiconductor Power Dissipation 2100 W  IGBT Transistor Modules Power Dissipation 2100 W  Fuji Semiconductor IGBT Transistor Modules Power Dissipation 2100 W   Resistance, Thermal, Junction to Case 0.06 °C/W  Fuji Semiconductor Resistance, Thermal, Junction to Case 0.06 °C/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.06 °C/W  Fuji Semiconductor IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.06 °C/W   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  Fuji Semiconductor IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range Maximum of +150 °C  Fuji Semiconductor Temperature, Operating, Range Maximum of +150 °C  IGBT Transistor Modules Temperature, Operating, Range Maximum of +150 °C  Fuji Semiconductor IGBT Transistor Modules Temperature, Operating, Range Maximum of +150 °C   Voltage, Collector to Emitter 1200 V  Fuji Semiconductor Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  Fuji Semiconductor Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  Fuji Semiconductor Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  Fuji Semiconductor IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Width 2.441" (62mm)  Fuji Semiconductor Width 2.441" (62mm)  IGBT Transistor Modules Width 2.441" (62mm)  Fuji Semiconductor IGBT Transistor Modules Width 2.441" (62mm)