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Features:

FAP-III = Logic Level, High Avalanche Ruggedness

FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V

FAP-IIA = Reduced Turn Off Time

FAP-IIIBH = High Speed Non Logic

FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V

FAP-G = Ultra Fast Switching

Trench Gate Series = Ultra Low On-Resistance`

Application	For switching
Capacitance, Input	2750 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	±50 A
Current, Drain, Pulse	±200
Dimensions	10 x 4.5 x 15 mm
Height	0.591" (15mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	150 °C
Package Type	TO-220AB
Polarization	N-Channel
Power Dissipation	60 W
Resistance, Drain to Source On	17 mΩ
Resistance, Thermal, Junction to Case	2.08 °C?W (Max.)
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	75 °C⁄W
Time, Turn-Off Delay	180 ns
Time, Turn-On Delay	13 ns
Voltage, Breakdown, Drain to Source	30 V
Voltage, Drain to Source	30 V
Voltage, Forward, Diode	1.14 V
Voltage, Gate to Source	±16 V
Width	0.177" (4.5mm)
关键词

Application For switching  Fuji Semiconductor Application For switching  MOSFET Transistors Application For switching  Fuji Semiconductor MOSFET Transistors Application For switching   Capacitance, Input 2750 pF @ 25 V  Fuji Semiconductor Capacitance, Input 2750 pF @ 25 V  MOSFET Transistors Capacitance, Input 2750 pF @ 25 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 2750 pF @ 25 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±50 A  Fuji Semiconductor Current, Drain ±50 A  MOSFET Transistors Current, Drain ±50 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±50 A   Current, Drain, Pulse ±200  Fuji Semiconductor Current, Drain, Pulse ±200  MOSFET Transistors Current, Drain, Pulse ±200  Fuji Semiconductor MOSFET Transistors Current, Drain, Pulse ±200   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor MOSFET Transistors Dimensions 10 x 4.5 x 15 mm   Height 0.591" (15mm)  Fuji Semiconductor Height 0.591" (15mm)  MOSFET Transistors Height 0.591" (15mm)  Fuji Semiconductor MOSFET Transistors Height 0.591" (15mm)   Mounting Type Through Hole  Fuji Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Fuji Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Fuji Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Fuji Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Fuji Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature 150 °C  Fuji Semiconductor Operating and Storage Temperature 150 °C  MOSFET Transistors Operating and Storage Temperature 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature 150 °C   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 60 W  Fuji Semiconductor Power Dissipation 60 W  MOSFET Transistors Power Dissipation 60 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 60 W   Resistance, Drain to Source On 17 mΩ  Fuji Semiconductor Resistance, Drain to Source On 17 mΩ  MOSFET Transistors Resistance, Drain to Source On 17 mΩ  Fuji Semiconductor MOSFET Transistors Resistance, Drain to Source On 17 mΩ   Resistance, Thermal, Junction to Case 2.08 °C?W (Max.)  Fuji Semiconductor Resistance, Thermal, Junction to Case 2.08 °C?W (Max.)  MOSFET Transistors Resistance, Thermal, Junction to Case 2.08 °C?W (Max.)  Fuji Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 2.08 °C?W (Max.)   Temperature, Operating, Maximum +150 °C  Fuji Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Fuji Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Fuji Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 75 °C⁄W  Fuji Semiconductor Thermal Resistance, Junction to Ambient 75 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 75 °C⁄W  Fuji Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 75 °C⁄W   Time, Turn-Off Delay 180 ns  Fuji Semiconductor Time, Turn-Off Delay 180 ns  MOSFET Transistors Time, Turn-Off Delay 180 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-Off Delay 180 ns   Time, Turn-On Delay 13 ns  Fuji Semiconductor Time, Turn-On Delay 13 ns  MOSFET Transistors Time, Turn-On Delay 13 ns  Fuji Semiconductor MOSFET Transistors Time, Turn-On Delay 13 ns   Voltage, Breakdown, Drain to Source 30 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Fuji Semiconductor Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1.14 V  Fuji Semiconductor Voltage, Forward, Diode 1.14 V  MOSFET Transistors Voltage, Forward, Diode 1.14 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.14 V   Voltage, Gate to Source ±16 V  Fuji Semiconductor Voltage, Gate to Source ±16 V  MOSFET Transistors Voltage, Gate to Source ±16 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±16 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)