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2SK3590-01 - 

MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 31Milliohms; ID +/-57A; TO-220AB; PD 270W

Fuji Semiconductor 2SK3590-01
声明：图片仅供参考，请以实物为准！
制造商产品编号：
2SK3590-01
仓库库存编号：
70212477
技术数据表：
View 2SK3590-01 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

2SK3590-01产品概述

Features:
  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA =Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance

    • 2SK3590-01产品信息

      Capacitance, Input  1940 pF @ 75 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  ±57 A  
      Dimensions  10 x 4.5 x 15 mm  
      Gate Charge, Total  52 nC  
      Height  0.591" (15mm)  
      Length  0.393" (10mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to 150 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  270 W  
      Resistance, Drain to Source On  41 mΩ  
      Resistance, Thermal, Junction to Case  0.46300000000000002 °C/W  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  62 °C/W  
      Time, Turn-Off Delay  50 ns  
      Time, Turn-On Delay  20 ns  
      Transconductance, Forward  26 S  
      Typical Gate Charge @ Vgs  52 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  150 V  
      Voltage, Drain to Source  150 V  
      Voltage, Forward, Diode  1.1 V  
      Voltage, Gate to Source  ±30 V  
      Voltage, Threshold  2.5-3.5 V  
      Width  0.177" (4.5mm)  
    关键词         

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    Capacitance, Input 1940 pF @ 75 V  Fuji Semiconductor Capacitance, Input 1940 pF @ 75 V  MOSFET Transistors Capacitance, Input 1940 pF @ 75 V  Fuji Semiconductor MOSFET Transistors Capacitance, Input 1940 pF @ 75 V   Channel Mode Enhancement  Fuji Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Fuji Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  Fuji Semiconductor Channel Type N  MOSFET Transistors Channel Type N  Fuji Semiconductor MOSFET Transistors Channel Type N   Configuration Single  Fuji Semiconductor Configuration Single  MOSFET Transistors Configuration Single  Fuji Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±57 A  Fuji Semiconductor Current, Drain ±57 A  MOSFET Transistors Current, Drain ±57 A  Fuji Semiconductor MOSFET Transistors Current, Drain ±57 A   Dimensions 10 x 4.5 x 15 mm  Fuji Semiconductor Dimensions 10 x 4.5 x 15 mm  MOSFET Transistors Dimensions 10 x 4.5 x 15 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Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  Fuji Semiconductor MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor Operating and Storage Temperature -55 to 150 °C  MOSFET Transistors Operating and Storage Temperature -55 to 150 °C  Fuji Semiconductor MOSFET Transistors Operating and Storage Temperature -55 to 150 °C   Package Type TO-220AB  Fuji Semiconductor Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Fuji Semiconductor MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Fuji Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Fuji Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 270 W  Fuji Semiconductor Power Dissipation 270 W  MOSFET Transistors Power Dissipation 270 W  Fuji Semiconductor MOSFET Transistors Power Dissipation 270 W   Resistance, Drain to Source On 41 mΩ  Fuji Semiconductor Resistance, Drain to 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Forward 26 S  Fuji Semiconductor MOSFET Transistors Transconductance, Forward 26 S   Typical Gate Charge @ Vgs 52 nC @ 10 V  Fuji Semiconductor Typical Gate Charge @ Vgs 52 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 52 nC @ 10 V  Fuji Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 52 nC @ 10 V   Voltage, Breakdown, Drain to Source 150 V  Fuji Semiconductor Voltage, Breakdown, Drain to Source 150 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V  Fuji Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 150 V   Voltage, Drain to Source 150 V  Fuji Semiconductor Voltage, Drain to Source 150 V  MOSFET Transistors Voltage, Drain to Source 150 V  Fuji Semiconductor MOSFET Transistors Voltage, Drain to Source 150 V   Voltage, Forward, Diode 1.1 V  Fuji Semiconductor Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Fuji Semiconductor MOSFET Transistors Voltage, Forward, Diode 1.1 V   Voltage, Gate to Source ±30 V  Fuji Semiconductor Voltage, Gate to Source ±30 V  MOSFET Transistors Voltage, Gate to Source ±30 V  Fuji Semiconductor MOSFET Transistors Voltage, Gate to Source ±30 V   Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor Voltage, Threshold 2.5-3.5 V  MOSFET Transistors Voltage, Threshold 2.5-3.5 V  Fuji Semiconductor MOSFET Transistors Voltage, Threshold 2.5-3.5 V   Width 0.177" (4.5mm)  Fuji Semiconductor Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Fuji Semiconductor MOSFET Transistors Width 0.177" (4.5mm)  
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