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Advanced Process Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

Lead-Free

Brand/Series	HEXFET Series
Capacitance, Input	290 pF @ -15 V (P), 330 pF @ 15 V (N)
Channel Mode	Enhancement
Channel Type	N, P
Configuration	Dual Drain
Current, Drain	-2.3 (P), 3.5 (N) A
Dimensions	5.00 x 4.00 x 1.50 mm
Gate Charge, Total	9.4/10 nC
Height	0.059" (1.5mm)
Length	0.196" (5mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Package Type	SO-8
Polarization	N-Channel and P-Channel
Power Dissipation	2 W
Resistance, Drain to Source On	0.16 (N), 0.40 (P) Ω
Temperature, Operating	-55 to 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	62.5 °C/W
Time, Turn-Off Delay	45 ns
Time, Turn-On Delay	12 (P), 7 (N) ns
Transconductance, Forward	3.1 (P), 4.3 (N) S
Typical Gate Charge @ Vgs	10 nC @ -10 V (P), 9.4 nC @ 10 V (N)
Voltage, Breakdown, Drain to Source	25/-25 V
Voltage, Drain to Source	-25 (P), 25 (N) V
Voltage, Forward, Diode	1.2/-1.2 V
Voltage, Gate to Source	±20 V
Width	0.157" (4mm)
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• Molex Incorporated
  Header; W2B; 2.00mm Pitch; Sherlock; Rt Angle; w/ Positive Lock, 4 Circuits
  
  型号：35363-0460
  仓库库存编号：70090861
  
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Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N)  International Rectifier Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N)  MOSFET Transistors Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N)  International Rectifier MOSFET Transistors Capacitance, Input 290 pF @ -15 V (P), 330 pF @ 15 V (N)   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  International Rectifier Channel Type N, P  MOSFET Transistors Channel Type N, P  International Rectifier MOSFET Transistors Channel Type N, P   Configuration Dual Drain  International Rectifier Configuration Dual Drain  MOSFET Transistors Configuration Dual Drain  International Rectifier MOSFET Transistors Configuration Dual Drain   Current, Drain -2.3 (P), 3.5 (N) A  International Rectifier Current, Drain -2.3 (P), 3.5 (N) A  MOSFET Transistors Current, Drain -2.3 (P), 3.5 (N) A  International Rectifier MOSFET Transistors Current, Drain -2.3 (P), 3.5 (N) A   Dimensions 5.00 x 4.00 x 1.50 mm  International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm  MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm  International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm   Gate Charge, Total 9.4/10 nC  International Rectifier Gate Charge, Total 9.4/10 nC  MOSFET Transistors Gate Charge, Total 9.4/10 nC  International Rectifier MOSFET Transistors Gate Charge, Total 9.4/10 nC   Height 0.059" (1.5mm)  International Rectifier Height 0.059" (1.5mm)  MOSFET Transistors Height 0.059" (1.5mm)  International Rectifier MOSFET Transistors Height 0.059" (1.5mm)   Length 0.196" (5mm)  International Rectifier Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  International Rectifier MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  International Rectifier Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  International Rectifier MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  International Rectifier Number of Pins 8  MOSFET Transistors Number of Pins 8  International Rectifier MOSFET Transistors Number of Pins 8   Package Type SO-8  International Rectifier Package Type SO-8  MOSFET Transistors Package Type SO-8  International Rectifier MOSFET Transistors Package Type SO-8   Polarization N-Channel and P-Channel  International Rectifier Polarization N-Channel and P-Channel  MOSFET Transistors Polarization N-Channel and P-Channel  International Rectifier MOSFET Transistors Polarization N-Channel and P-Channel   Power Dissipation 2 W  International Rectifier Power Dissipation 2 W  MOSFET Transistors Power Dissipation 2 W  International Rectifier MOSFET Transistors Power Dissipation 2 W   Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω  International Rectifier Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω  MOSFET Transistors Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.16 (N), 0.40 (P) Ω   Temperature, Operating -55 to 150 °C  International Rectifier Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  International Rectifier MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 62.5 °C/W  International Rectifier Thermal Resistance, Junction to Ambient 62.5 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62.5 °C/W  International Rectifier MOSFET Transistors Thermal Resistance, Junction to Ambient 62.5 °C/W   Time, Turn-Off Delay 45 ns  International Rectifier Time, Turn-Off Delay 45 ns  MOSFET Transistors Time, Turn-Off Delay 45 ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 45 ns   Time, Turn-On Delay 12 (P), 7 (N) ns  International Rectifier Time, Turn-On Delay 12 (P), 7 (N) ns  MOSFET Transistors Time, Turn-On Delay 12 (P), 7 (N) ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 12 (P), 7 (N) ns   Transconductance, Forward 3.1 (P), 4.3 (N) S  International Rectifier Transconductance, Forward 3.1 (P), 4.3 (N) S  MOSFET Transistors Transconductance, Forward 3.1 (P), 4.3 (N) S  International Rectifier MOSFET Transistors Transconductance, Forward 3.1 (P), 4.3 (N) S   Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N)  International Rectifier Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N)  MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N)  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 10 nC @ -10 V (P), 9.4 nC @ 10 V (N)   Voltage, Breakdown, Drain to Source 25/-25 V  International Rectifier Voltage, Breakdown, Drain to Source 25/-25 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 25/-25 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 25/-25 V   Voltage, Drain to Source -25 (P), 25 (N) V  International Rectifier Voltage, Drain to Source -25 (P), 25 (N) V  MOSFET Transistors Voltage, Drain to Source -25 (P), 25 (N) V  International Rectifier MOSFET Transistors Voltage, Drain to Source -25 (P), 25 (N) V   Voltage, Forward, Diode 1.2/-1.2 V  International Rectifier Voltage, Forward, Diode 1.2/-1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2/-1.2 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 1.2/-1.2 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  International Rectifier Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  International Rectifier MOSFET Transistors Width 0.157" (4mm)