| Brand/Series |
HEXFET Series |
|
| Capacitance, Input |
2675 pF @ -25 V |
|
| Channel Mode |
Enhancement |
|
| Channel Type |
N |
|
| Configuration |
Dual Source, Quad Drain |
|
| Current, Drain |
-8 A |
|
| Dimensions |
5.00 x 4.00 x 1.50 mm |
|
| Gate Charge, Total |
52 nC |
|
| Height |
0.059" (1.5mm) |
|
| Length |
0.196" (5mm) |
|
| Mounting Type |
Surface Mount |
|
| Number of Elements per Chip |
2 |
|
| Number of Pins |
8 |
|
| Package Type |
SO-8 |
|
| Polarization |
Dual P-Channel |
|
| Power Dissipation |
2 W |
|
| Resistance, Drain to Source On |
32 mΩ |
|
| Temperature, Operating, Maximum |
+150 °C |
|
| Temperature, Operating, Minimum |
-55 °C |
|
| Temperature, Operating, Range |
-55 to +150 °C |
|
| Time, Turn-Off Delay |
198 ns |
|
| Time, Turn-On Delay |
13 ns |
|
| Transconductance, Forward |
12 S |
|
| Typical Gate Charge @ Vgs |
52 nC @ -10 V |
|
| Voltage, Breakdown, Drain to Source |
-30 V |
|
| Voltage, Drain to Source |
-30 V |
|
| Voltage, Forward, Diode |
-1.2 V |
|
| Voltage, Gate to Source |
±20 V |
|
| Width |
0.157" (4mm) |
|
| 关键词 |