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Generation V Technology

Ultra Low On-Resistance

Complimentary Half Bridge

Surface Mount

Fully Avalanche rated

Lead-Free

Brand/Series	HEXFET Series
Capacitance, Input	650 pF @ 25 V (N), 710 pF @ -25 V (P)
Channel Mode	Enhancement
Channel Type	N, P
Configuration	Dual Drain
Current, Drain	-5.3 (P), 7.3 (N) A
Dimensions	5.00 x 4.00 x 1.50 mm
Gate Charge, Total	22/23 nC
Height	0.059" (1.5mm)
Length	0.196" (5mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Package Type	SO-8
Polarization	N-Channel and P-Channel
Power Dissipation	2.5 W
Resistance, Drain to Source On	0.046 (N), 0.098 (P) Ω
Temperature, Operating	-55 to 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	50 °C/W
Time, Turn-Off Delay	26 (N), 34 (P) ns
Time, Turn-On Delay	13 (P), 8.1 (N) ns
Transconductance, Forward	14 (N), 7.7 (P) S
Typical Gate Charge @ Vgs	22 nC @ 10 V (N), 23 nC @ -10 V (P)
Voltage, Breakdown, Drain to Source	30/-30 V
Voltage, Drain to Source	-30 (P), 30 (N) V
Voltage, Forward, Diode	0.78/-0.78 V
Voltage, Gate to Source	±20 V
Width	0.157" (4mm)
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• Vishay PCS
  MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3 Ohms; ID 4.1A; TO-220AB; PD 125W; VGS +/-20V
  
  型号：IRFBE30PBF
  仓库库存编号：70078888
  
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• 搜索

• 
  
• Vishay PCS
  MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3 Ohms; ID 4.1A; TO-220AB; PD 125W; VGS +/-20V
  
  型号：IRFBE30PBF
  仓库库存编号：70078888
  
• 
  
  
• 搜索

Brand/Series HEXFET Series  International Rectifier Brand/Series HEXFET Series  MOSFET Transistors Brand/Series HEXFET Series  International Rectifier MOSFET Transistors Brand/Series HEXFET Series   Capacitance, Input 650 pF @ 25 V (N), 710 pF @ -25 V (P)  International Rectifier Capacitance, Input 650 pF @ 25 V (N), 710 pF @ -25 V (P)  MOSFET Transistors Capacitance, Input 650 pF @ 25 V (N), 710 pF @ -25 V (P)  International Rectifier MOSFET Transistors Capacitance, Input 650 pF @ 25 V (N), 710 pF @ -25 V (P)   Channel Mode Enhancement  International Rectifier Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  International Rectifier MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  International Rectifier Channel Type N, P  MOSFET Transistors Channel Type N, P  International Rectifier MOSFET Transistors Channel Type N, P   Configuration Dual Drain  International Rectifier Configuration Dual Drain  MOSFET Transistors Configuration Dual Drain  International Rectifier MOSFET Transistors Configuration Dual Drain   Current, Drain -5.3 (P), 7.3 (N) A  International Rectifier Current, Drain -5.3 (P), 7.3 (N) A  MOSFET Transistors Current, Drain -5.3 (P), 7.3 (N) A  International Rectifier MOSFET Transistors Current, Drain -5.3 (P), 7.3 (N) A   Dimensions 5.00 x 4.00 x 1.50 mm  International Rectifier Dimensions 5.00 x 4.00 x 1.50 mm  MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm  International Rectifier MOSFET Transistors Dimensions 5.00 x 4.00 x 1.50 mm   Gate Charge, Total 22/23 nC  International Rectifier Gate Charge, Total 22/23 nC  MOSFET Transistors Gate Charge, Total 22/23 nC  International Rectifier MOSFET Transistors Gate Charge, Total 22/23 nC   Height 0.059" (1.5mm)  International Rectifier Height 0.059" (1.5mm)  MOSFET Transistors Height 0.059" (1.5mm)  International Rectifier MOSFET Transistors Height 0.059" (1.5mm)   Length 0.196" (5mm)  International Rectifier Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  International Rectifier MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  International Rectifier Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  International Rectifier MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  International Rectifier Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  International Rectifier MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  International Rectifier Number of Pins 8  MOSFET Transistors Number of Pins 8  International Rectifier MOSFET Transistors Number of Pins 8   Package Type SO-8  International Rectifier Package Type SO-8  MOSFET Transistors Package Type SO-8  International Rectifier MOSFET Transistors Package Type SO-8   Polarization N-Channel and P-Channel  International Rectifier Polarization N-Channel and P-Channel  MOSFET Transistors Polarization N-Channel and P-Channel  International Rectifier MOSFET Transistors Polarization N-Channel and P-Channel   Power Dissipation 2.5 W  International Rectifier Power Dissipation 2.5 W  MOSFET Transistors Power Dissipation 2.5 W  International Rectifier MOSFET Transistors Power Dissipation 2.5 W   Resistance, Drain to Source On 0.046 (N), 0.098 (P) Ω  International Rectifier Resistance, Drain to Source On 0.046 (N), 0.098 (P) Ω  MOSFET Transistors Resistance, Drain to Source On 0.046 (N), 0.098 (P) Ω  International Rectifier MOSFET Transistors Resistance, Drain to Source On 0.046 (N), 0.098 (P) Ω   Temperature, Operating -55 to 150 °C  International Rectifier Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  International Rectifier MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  International Rectifier Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  International Rectifier Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  International Rectifier MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  International Rectifier Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  International Rectifier MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 50 °C/W  International Rectifier Thermal Resistance, Junction to Ambient 50 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 50 °C/W  International Rectifier MOSFET Transistors Thermal Resistance, Junction to Ambient 50 °C/W   Time, Turn-Off Delay 26 (N), 34 (P) ns  International Rectifier Time, Turn-Off Delay 26 (N), 34 (P) ns  MOSFET Transistors Time, Turn-Off Delay 26 (N), 34 (P) ns  International Rectifier MOSFET Transistors Time, Turn-Off Delay 26 (N), 34 (P) ns   Time, Turn-On Delay 13 (P), 8.1 (N) ns  International Rectifier Time, Turn-On Delay 13 (P), 8.1 (N) ns  MOSFET Transistors Time, Turn-On Delay 13 (P), 8.1 (N) ns  International Rectifier MOSFET Transistors Time, Turn-On Delay 13 (P), 8.1 (N) ns   Transconductance, Forward 14 (N), 7.7 (P) S  International Rectifier Transconductance, Forward 14 (N), 7.7 (P) S  MOSFET Transistors Transconductance, Forward 14 (N), 7.7 (P) S  International Rectifier MOSFET Transistors Transconductance, Forward 14 (N), 7.7 (P) S   Typical Gate Charge @ Vgs 22 nC @ 10 V (N), 23 nC @ -10 V (P)  International Rectifier Typical Gate Charge @ Vgs 22 nC @ 10 V (N), 23 nC @ -10 V (P)  MOSFET Transistors Typical Gate Charge @ Vgs 22 nC @ 10 V (N), 23 nC @ -10 V (P)  International Rectifier MOSFET Transistors Typical Gate Charge @ Vgs 22 nC @ 10 V (N), 23 nC @ -10 V (P)   Voltage, Breakdown, Drain to Source 30/-30 V  International Rectifier Voltage, Breakdown, Drain to Source 30/-30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30/-30 V  International Rectifier MOSFET Transistors Voltage, Breakdown, Drain to Source 30/-30 V   Voltage, Drain to Source -30 (P), 30 (N) V  International Rectifier Voltage, Drain to Source -30 (P), 30 (N) V  MOSFET Transistors Voltage, Drain to Source -30 (P), 30 (N) V  International Rectifier MOSFET Transistors Voltage, Drain to Source -30 (P), 30 (N) V   Voltage, Forward, Diode 0.78/-0.78 V  International Rectifier Voltage, Forward, Diode 0.78/-0.78 V  MOSFET Transistors Voltage, Forward, Diode 0.78/-0.78 V  International Rectifier MOSFET Transistors Voltage, Forward, Diode 0.78/-0.78 V   Voltage, Gate to Source ±20 V  International Rectifier Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  International Rectifier MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.157" (4mm)  International Rectifier Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  International Rectifier MOSFET Transistors Width 0.157" (4mm)