| Brand/Series |
HEXFET Series |
|
| Capacitance, Input |
2450 pF @ 25 V |
|
| Channel Mode |
Enhancement |
|
| Channel Type |
N |
|
| Configuration |
Dual Drain |
|
| Current, Drain |
59 A |
|
| Gate Charge, Total |
76 nC |
|
| Height |
0.345" (8.77mm) |
|
| Mounting Type |
Through Hole |
|
| Number of Elements per Chip |
1 |
|
| Number of Pins |
3 |
|
| Package Type |
TO-220AB |
|
| Polarization |
N-Channel |
|
| Power Dissipation |
200 W |
|
| Resistance, Drain to Source On |
0.025 mΩ |
|
| Temperature, Operating, Minimum |
-55 °C |
|
| Temperature, Operating, Range |
-55 to +175 °C |
|
| Time, Turn-Off Delay |
20 ns |
|
| Time, Turn-On Delay |
16 ns |
|
| Transconductance, Forward |
18 S |
|
| Voltage, Breakdown, Drain to Source |
100 V |
|
| Voltage, Drain to Source |
100 V |
|
| Voltage, Forward, Diode |
1.3 V |
|
| Voltage, Gate to Source |
±30 V |
|
| Width |
0.185" (4.69mm) |
|
| 关键词 |