| Brand/Series |
HEXFET Series |
|
| Capacitance, Input |
3470 pF @ 25 V |
|
| Channel Mode |
Enhancement |
|
| Channel Type |
N |
|
| Configuration |
Single |
|
| Current, Drain |
60 A |
|
| Dimensions |
10.54 x 4.69 x 15.24 mm |
|
| Gate Charge, Total |
95 nC |
|
| Height |
0.6" (15.24mm) |
|
| Length |
0.414" (10.54mm) |
|
| Mounting Type |
Through Hole |
|
| Number of Elements per Chip |
1 |
|
| Number of Pins |
3 |
|
| Package Type |
TO-220AB |
|
| Polarization |
N-Channel |
|
| Power Dissipation |
330 W |
|
| Resistance, Drain to Source On |
0.032 Ω |
|
| Resistance, Thermal, Junction to Case |
0.45 °C/W |
|
| Temperature, Operating, Maximum |
+175 °C |
|
| Temperature, Operating, Minimum |
-55 °C |
|
| Temperature, Operating, Range |
-55 to +175 °C |
|
| Time, Turn-Off Delay |
28 ns |
|
| Time, Turn-On Delay |
18 ns |
|
| Transconductance, Forward |
22 sec |
|
| Typical Gate Charge @ Vgs |
95 nC @ 10 V |
|
| Voltage, Breakdown, Drain to Source |
150 V |
|
| Voltage, Drain to Source |
150 V |
|
| Voltage, Forward, Diode |
1.3 V |
|
| Voltage, Gate to Source |
± 16 V |
|
| Width |
0.185" (4.69mm) |
|
| 关键词 |