| Brand/Series |
HEXFET Series |
|
| Capacitance, Input |
110 pF @ 15 V |
|
| Channel Mode |
Enhancement |
|
| Channel Type |
N |
|
| Configuration |
Single |
|
| Current, Drain |
1.2 A |
|
| Dimensions |
3.04 x 1.40 x 1.02 mm |
|
| Gate Charge, Total |
2.6 nC |
|
| Height |
0.04" (1.02mm) |
|
| Length |
0.119" (3.04mm) |
|
| Mounting Type |
Surface Mount |
|
| Number of Elements per Chip |
1 |
|
| Number of Pins |
3 |
|
| Package Type |
Micro8 |
|
| Polarization |
N-Channel |
|
| Power Dissipation |
540 W |
|
| Resistance, Drain to Source On |
0.35 Ω |
|
| Temperature, Operating, Maximum |
+150 °C |
|
| Temperature, Operating, Minimum |
-55 °C |
|
| Temperature, Operating, Range |
-55 to +150 °C |
|
| Time, Turn-Off Delay |
9.7 ns |
|
| Time, Turn-On Delay |
2.5 ns |
|
| Transconductance, Forward |
1.3 S |
|
| Typical Gate Charge @ Vgs |
2.6 nC @ 4.5 V |
|
| Voltage, Breakdown, Drain to Source |
20 V |
|
| Voltage, Drain to Source |
20 V |
|
| Voltage, Forward, Diode |
1.2 V |
|
| Voltage, Gate to Source |
±12 V |
|
| Width |
0.055" (1.4mm) |
|
| 关键词 |