| Brand/Series |
HEXFET Series |
|
| Capacitance, Input |
11360 pF @ 50 V |
|
| Channel Mode |
Enhancement |
|
| Channel Type |
N |
|
| Configuration |
Dual Drain |
|
| Current, Drain |
180 A |
|
| Dimensions |
10.67 x 9.65 x 4.576 mm |
|
| Height |
0.18" (4.576mm) |
|
| Length |
0.42" (10.67mm) |
|
| Mounting Type |
Surface Mount |
|
| Number of Elements per Chip |
1 |
|
| Number of Pins |
3 |
|
| Package Type |
D2PAK |
|
| Power Dissipation |
370 W |
|
| Resistance, Drain to Source On |
4.5 mΩ |
|
| Temperature, Operating, Maximum |
+175 °C |
|
| Temperature, Operating, Minimum |
-55 °C |
|
| Temperature, Operating, Range |
-55 to +175 °C |
|
| Time, Turn-Off Delay |
110 ns |
|
| Time, Turn-On Delay |
74 ns |
|
| Transconductance, Forward |
320 S |
|
| Typical Gate Charge @ Vgs |
87 nC @ 4.5 V |
|
| Voltage, Drain to Source |
100 V |
|
| Voltage, Forward, Diode |
1.3 V |
|
| Voltage, Gate to Source |
±16 V |
|
| Width |
0.38" (9.65mm) |
|
| 关键词 |