amphenol代理商
专业销售Amphenol（安费诺）全系列产品-英国2号仓库
库存查询
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索：    
热门搜索词:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

NTE128 - 

TRANSISTOR NPN SILICON 140V IC-1A TO-39AUDIO OUTPUT VIDEO DRIVER

NTE Electronics, Inc. NTE128
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE128
仓库库存编号：
70214874
技术数据表：
View NTE128 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE128产品概述

Silicon Complementary Transistor, -65 to +200°C Operating Junction Temperature
  • High breakdown voltages
  • Low leakage currents
  • Beta usefUL over an extremely wide current range
    This type package designed primarily for amplifier and switching applications.

    • NTE128产品信息

      Brand/Series  Transistor Series  
      Configuration  Common Base  
      Current, Collector  1 A  
      Current, Gain  15  
      Diameter  9.39 mm  
      Dimensions  9.39 Dia. x 6.6 H mm  
      Frequency, Operating  100 to 400 MHz  
      Gain, DC Current, Maximum  300  
      Gain, DC Current, Minimum  15  
      Height  0.26" (6.6mm)  
      Material  Si  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Package Type  TO-39  
      Polarity  NPN  
      Power Dissipation  0.8 W  
      Primary Type  Si  
      Resistance, Thermal, Junction to Case  16.5 °C/W  
      Temperature, Operating, Maximum  +200 °C  
      Temperature, Operating, Minimum  -65 °C  
      Temperature, Operating, Range  -65 to +200 °C  
      Thermal Resistance, Junction to Ambient  89.5 °C⁄W  
      Transistor Type  NPN  
      Type  Amplifier, Driver, Switch  
      Voltage, Breakdown, Collector to Emitter  80 V  
      Voltage, Collector to Base  140 V  
      Voltage, Collector to Emitter  80 V  
      Voltage, Collector to Emitter, Saturation  0.5 V  
      Voltage, Emitter to Base  7 V  
      Voltage, Saturation, Base to Emitter  1.1 V  
      Voltage, Saturation, Collector to Emitter  0.2 V  
    关键词         

    NTE128客户还搜索了

    • 参考图片
    • 制造商 / 说明 / 型号 / 仓库库存编号
    • PDF
    • 操作

    NTE128相关搜索

    Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 1 A  NTE Electronics, Inc. Current, Collector 1 A  Bipolar Transistors Current, Collector 1 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 1 A   Current, Gain 15  NTE Electronics, Inc. Current, Gain 15  Bipolar Transistors Current, Gain 15  NTE Electronics, Inc. Bipolar Transistors Current, Gain 15   Diameter 9.39 mm  NTE Electronics, Inc. Diameter 9.39 mm  Bipolar Transistors Diameter 9.39 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 9.39 mm   Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Dimensions 9.39 Dia. x 6.6 H mm  Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm   Frequency, Operating 100 to 400 MHz  NTE Electronics, Inc. Frequency, Operating 100 to 400 MHz  Bipolar Transistors Frequency, Operating 100 to 400 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 100 to 400 MHz   Gain, DC Current, Maximum 300  NTE Electronics, Inc. Gain, DC Current, Maximum 300  Bipolar Transistors Gain, DC Current, Maximum 300  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 300   Gain, DC Current, Minimum 15  NTE Electronics, Inc. Gain, DC Current, Minimum 15  Bipolar Transistors Gain, DC Current, Minimum 15  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 15   Height 0.26" (6.6mm)  NTE Electronics, Inc. Height 0.26" (6.6mm)  Bipolar Transistors Height 0.26" (6.6mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.26" (6.6mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-39  NTE Electronics, Inc. Package Type TO-39  Bipolar Transistors Package Type TO-39  NTE Electronics, Inc. Bipolar Transistors Package Type TO-39   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 0.8 W  NTE Electronics, Inc. Power Dissipation 0.8 W  Bipolar Transistors Power Dissipation 0.8 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 0.8 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 16.5 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 16.5 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 16.5 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 16.5 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Thermal Resistance, Junction to Ambient 89.5 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 89.5 °C⁄W  Bipolar Transistors Thermal Resistance, Junction to Ambient 89.5 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Thermal Resistance, Junction to Ambient 89.5 °C⁄W   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, Driver, Switch  NTE Electronics, Inc. Type Amplifier, Driver, Switch  Bipolar Transistors Type Amplifier, Driver, Switch  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, Driver, Switch   Voltage, Breakdown, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 80 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 80 V   Voltage, Collector to Base 140 V  NTE Electronics, Inc. Voltage, Collector to Base 140 V  Bipolar Transistors Voltage, Collector to Base 140 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 140 V   Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Voltage, Collector to Emitter 80 V  Bipolar Transistors Voltage, Collector to Emitter 80 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 80 V   Voltage, Collector to Emitter, Saturation 0.5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 0.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.5 V   Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Voltage, Emitter to Base 7 V  Bipolar Transistors Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 7 V   Voltage, Saturation, Base to Emitter 1.1 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.1 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.1 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.1 V   Voltage, Saturation, Collector to Emitter 0.2 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 0.2 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 0.2 V  
    电话:400-900-3095
    QQ:800152669
    关于我们 | Amphenol简介 | Amphenol产品 | Amphenol产品应用 | Amphenol动态 | 按系列选型 | 按产品规格选型 | Amphenol选型手册 | 付款方式 | 联系我们
    Copyright © 2017 www.amphenol-connect.com All Rights Reserved. 技术支持：电子元器件 ICP备案证书号:粤ICP备11103613号