| Brand/Series |
Transistor Series |
|
| Configuration |
Common Base |
|
| Current, Collector |
0.2 A |
|
| Current, Gain |
20 |
|
| Device Dissipation |
7 W |
|
| Diameter |
9.39 mm |
|
| Dimensions |
9.39 Dia. x 6.6 H mm |
|
| Frequency, Operating |
50 MHz |
|
| Gain, DC Current, Minimum |
20 |
|
| Height |
0.26" (6.6mm) |
|
| Material |
Si |
|
| Mounting Type |
Through Hole |
|
| Number of Elements per Chip |
1 |
|
| Number of Pins |
3 |
|
| Package Type |
TO-39 |
|
| Polarity |
NPN |
|
| Power Dissipation |
7 W |
|
| Primary Type |
Si |
|
| Resistance, Thermal, Junction to Case |
25 °C⁄W |
|
| Temperature, Junction, Operating |
0 to +200 °C |
|
| Temperature, Operating, Maximum |
+200 °C |
|
| Temperature, Operating, Range |
Maximum of +200 °C |
|
| Thermal Resistance, Junction to Ambient |
175 °C⁄W |
|
| Transistor Polarity |
NPN |
|
| Transistor Type |
NPN |
|
| Type |
High Voltage |
|
| Voltage, Breakdown, Collector to Emitter |
300 V |
|
| Voltage, Collector to Base |
300 V |
|
| Voltage, Collector to Emitter |
300 V |
|
| Voltage, Collector to Emitter, Saturation |
1 V |
|
| Voltage, Emitter to Base |
7 V |
|
| Voltage, Saturation, Base to Emitter |
0.85 V |
|
| 关键词 |