| Configuration |
Common Base |
|
| Current, Collector |
2 A |
|
| Current, Gain |
10 |
|
| Diameter |
9.39 mm |
|
| Dimensions |
9.39 Dia. x 6.6 H mm |
|
| Height |
0.26" (6.6mm) |
|
| Material |
Si |
|
| Mounting Type |
Through Hole |
|
| Number of Elements per Chip |
1 |
|
| Number of Pins |
3 |
|
| Power Dissipation |
10 W |
|
| Temperature, Operating, Maximum |
+200 °C |
|
| Temperature, Operating, Minimum |
-65 °C |
|
| Temperature, Operating, Range |
-65 to +200 °C |
|
| Transistor Type |
PNP |
|
| Voltage, Collector to Base |
100 V |
|
| Voltage, Collector to Emitter |
75 V |
|
| Voltage, Collector to Emitter, Saturation |
0.7 V |
|
| Voltage, Emitter to Base |
7 V |
|
| 关键词 |